Probing two topological surface bands of Sb<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>2</mml:mn></mml:msub></mml:math>Te<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>3</mml:mn></mml:msub></mml:math>by spin-polarized photoemission spectroscopy

Pauly, Christian; Bihlmayer, Gustav; Liebmann, Marcus; Grob, Martin; Georgi, A.; Subramaniam, Dinesh; Scholz, Markus; Sánchez-Barriga, J.; Varykhalov, A.; Blügel, Stefan; Rader, O.; Morgenstern, Markus

doi:10.1103/physrevb.86.235106

Cited by 90 publications

(95 citation statements)

References 56 publications

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“…As opposed to the prototypical TIs Bi 2 Se 3 and Bi 2 Te 3 , which are often referred to as the second generation TIs, Sb 2 Te 3 is the only binary tetradymite compound that exhibits exclusively p-type doping regardless of the growth method and preparation conditions 11 due to the fact that the equilibrium stability range is fully shifted to Sb side and does not include stoichiometric Sb 2 Te 3 12 , so that its TSS lies above the Fermi level 13,14 . For this reason, the TSS is always unoccupied in the ground state and can be revealed by ultrafast optical excitation, which in turn has been used to establish the TSS of Sb 2 Te 3 as a unique channel for the generation and control of transient spin currents that are of importance for spintronics 15 .…”

Section: Introductionmentioning

confidence: 99%

Rapid Surface Oxidation of Sb₂Te₃ as Indication for a Universal Trend in the Chemical Reactivity of Tetradymite Topological Insulators

et al. 2016

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Within the last few years topological insulators (TIs) have attracted a lot of interest due to their unique electronic structure with spin-polarized topological surface states (TSSs), which may pave the way for these materials to have a great potential in multiple applications. However, to enable consideration of TIs as building blocks for novel devices, stability of TSSs towards oxidation should be tested. Among the family of TIs with tetradymite structure, Sb 2 Te 3 is of p-type and appears to be the least explored material since its TSS is unoccupied in the ground state, a property that allows the use of optical excitations to generate spin currents relevant for spintronics. Here, we report relatively fast surface oxidation of Sb 2 Te 3 under ambient conditions. We show that the clean surface reacts rapidly with molecular oxygen and slowly with water, and that humidity plays an important role at the stage of the oxide-layer growth. In humid air, we show that Sb 2 Te 3 oxidizes in a time scale of minutes to hours, and much faster than other tetradymite TIs. The high surface reactivity revealed by our experiments is of critical importance and must be taken into account for the production and exploitation of novel TI-based devices using Sb 2 Te 3 as working material. Our results provide a fundamental and comprehensive understanding of the universal trend underlying the chemical reactivity of TIs.2

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Section: Introductionmentioning

confidence: 99%

Rapid Surface Oxidation of Sb₂Te₃ as Indication for a Universal Trend in the Chemical Reactivity of Tetradymite Topological Insulators

et al. 2016

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“…Aside from the topological surface state in the bulk band gap, Rashba-type spin-split surface states reside in the valence and conduction bands of Bi 2 Se 3 , Bi 2 Te 3 , and Sb 2 Te 3 [5,18,28]. In addition to these states, quantized Rashba-type states below the conduction band bottom (inside the bulk band gap) and M-shaped states inside the valence band local gap can arise as a result of adsorption of residual gases and of a variety other species.…”

Section: Introductionmentioning

confidence: 99%

Electronic and spin structure of the topological insulator Bi2Te2.4Se0.6

et al. 2014

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High-resolution spin-and angle-resolved photoemission spectroscopy measurements were performed on the three-dimensional topological insulator Bi 2 Te 2.4 Se 0.6 , which is characterized by enhanced thermoelectric properties. The Fermi level position is found to be located in the bulk energy gap independent of temperature and it is stable over a long time. Spin textures in the Dirac-cone state at energies above and below the Dirac point as well as in the Rashba-type valence band surface state are observed in agreement with theoretical prediction. The calculations of the surface electronic structure demonstrate that the fractional stoichiometry induced disorder within the Te/Se sublattice does not influence the Dirac-cone state dispersion. In spite of relatively high resistivity, temperature dependence of conductivity shows a weak metallic behavior that could explain the effective thermoelectric properties of the Bi 2 Te 2.4 Se 0.6 compound with the in-plane Seebeck coefficient reaching −330 μV/K at room temperature.

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“…Early experiments assessed the topological nature of bulk Sb and Sb-Bi alloys [21,22]. By contrast, the experimental observation of the predicted TSS in Sb 2 Te 3 has been delayed by the intrinsic p doping of this material [25,[28][29][30]. The topological properties of the intermediate members of this series still need to be addressed.…”

mentioning

confidence: 99%

Engineering the topological surface states in the(Sb2)m−Sb2Te3(m=0
Johannsen
¹
,
Autès
²
,
Crepaldi
³

et al. 2015
Phys. Rev. B
20
1
20
0
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We investigate the evolution of both the occupied and unoccupied electronic structure in representative compounds of the infinitely adaptive superlattice series (Sb 2 ) m -Sb 2 Te 3 (m = 0-3) by means of angle-resolved photoemission spectroscopy and time-delayed two-photon photoemission, combined with first-principles band-structure calculations. We discover that the topological nature of the surface states and their spin texture are robust, with dispersions evolving from linear (Dirac-like) to parabolic (Rashba-like) along the series, as the materials evolve from semiconductors to semimetals. Our findings provide a promising strategy for engineering the topological states with the desired flexibility needed for realizing different quantum phenomena and spintronics applications. Three-dimensional topological insulators (TIs) are materials where the topological properties of the insulating bulk band structure guarantee the existence of metallic surface states [1,2]. These topological surface states (TSS) are characterized by a Dirac-like energy-momentum dispersion and by a helical spin-momentum texture [3,4] that protects them against backscattering and localization [5,6]. TIs are promising materials for spintronics and provide an exceptional playground to study novel physical phenomena [7,8]. Possible applications depend on the ability to control the electronic properties of the TSS. Common strategies for achieving such a control involve chemical substitution and adsorbate doping [9][10][11][12][13]. Alternatively, it has been proposed that multilayer heterostructures could be used to obtain artificial TIs with tunable properties defined by the stacking sequences of the constituent two-dimensional building blocks [14][15][16].In this Rapid Communication, we demonstrate the possibility of TSS band-structure engineering in the naturally occurring homologous series of topological superlattices (Sb 2 ) m -(Sb 2 Te 3 ) n composed of Sb 2 bilayers (BLs) and Sb 2 Te 3 quintuple layers (QLs) [17,18]. This series enables a systematic investigation of the evolution of topological properties as a function of the stacking sequence of the constituent building blocks. Our results show that the topological states are remarkably robust and that their dispersion can be tuned in the explored range (m = 0-3; n = 1), and in bulk Sb, with an unchanging strong Z 2 index ν 0 = 1.All (Sb 2 ) m -(Sb 2 Te 3 ) n compounds display layered crystal structures produced by ordered stacking of Sb 2 Te 3 QLs and antimony BLs along the c axis of the hexagonal unit cell. This provides for an "infinitely adaptive series" of * marco.grioni@epfl.ch distinct compounds between the end member compositions Sb 2 Te 3 (m = 0) and Sb (n = 0) [17][18][19][20] that are known to be a TI and a topological semimetal, respectively [21][22][23][24][25][26][27]. Early experiments assessed the topological nature of bulk Sb and Sb-Bi alloys [21,22]. By contrast, the experimental observation of the predicted TSS in Sb 2 Te 3 has been delayed by the intrinsic p doping ...

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Probing two topological surface bands of Sb2Te3by spin-polarized photoemission spectroscopy

Cited by 90 publications

References 56 publications

Rapid Surface Oxidation of Sb₂Te₃ as Indication for a Universal Trend in the Chemical Reactivity of Tetradymite Topological Insulators

Rapid Surface Oxidation of Sb₂Te₃ as Indication for a Universal Trend in the Chemical Reactivity of Tetradymite Topological Insulators

Electronic and spin structure of the topological insulator Bi2Te2.4Se0.6

Engineering the topological surface states in the(Sb2)m−Sb2Te3(m=0
Johannsen
¹
,
Autès
²
,
Crepaldi
³

et al. 2015
Phys. Rev. B
20
1
20
0
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Probing two topological surface bands of Sb2Te3by spin-polarized photoemission spectroscopy

Cited by 90 publications

References 56 publications

Rapid Surface Oxidation of Sb2Te3 as Indication for a Universal Trend in the Chemical Reactivity of Tetradymite Topological Insulators

Rapid Surface Oxidation of Sb2Te3 as Indication for a Universal Trend in the Chemical Reactivity of Tetradymite Topological Insulators

Electronic and spin structure of the topological insulator Bi2Te2.4Se0.6

Engineering the topological surface states in the(Sb2)m−Sb2Te3(m=0Johannsen1, Autès2, Crepaldi3 et al. 2015Phys. Rev. B201200View full textAdd to dashboardCite

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Rapid Surface Oxidation of Sb₂Te₃ as Indication for a Universal Trend in the Chemical Reactivity of Tetradymite Topological Insulators

Rapid Surface Oxidation of Sb₂Te₃ as Indication for a Universal Trend in the Chemical Reactivity of Tetradymite Topological Insulators

Engineering the topological surface states in the(Sb2)m−Sb2Te3(m=0
Johannsen
¹
,
Autès
²
,
Crepaldi
³

et al. 2015
Phys. Rev. B
20
1
20
0
View full text Add to dashboard Cite