Process Control and Optimization of 4H-SiC Semiconductor Devices and Circuits

Hou, S. Y.; Shakir, Muhammad; Hellström, Per‐Erik; Zetterling, Carl-Mikael; Östling, Mikael

doi:10.1109/edtm.2019.8731140

Cited by 2 publications

(6 citation statements)

References 8 publications

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“…The performance uniformity and the yield of the devices and circuits have been upgraded from our former work by improving the processing flow [29]. The processing started from 4H-SiC 100 mm substrates with epitaxial layers.…”

Section: Design and Fabricationmentioning

confidence: 99%

“…The mesas of the devices were etched in three reactive ion etching (RIE) steps. A high flow of SF 6 (30 sccm) was applied in the RIE to solve the photoresist re-deposition issue [29]. A sloped mesa sidewall and a uniform etching speed was achieved.…”

Section: Design and Fabricationmentioning

confidence: 99%

“…We have also presented our work on a TTL process design kit (PDK) demonstrating the functionality of basic digital circuits up to 500 • C [28]. Here, our in-house processing flow for SiC bipolar technology has been optimized to achieve a higher yield in both device level and circuit level [29] so that an image sensor is demonstrated. The pixel sensor is realized in a bipolar 3-transistor (3-T) design.…”

Section: Introductionmentioning

confidence: 99%

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A Silicon Carbide 256 Pixel UV Image Sensor Array Operating at 400 °C

Hou

Shakir

Hellström

et al. 2020

IEEE J. Electron Devices Soc.

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An image sensor based on wide band gap silicon carbide (SiC) has the merits of high temperature operation and ultraviolet (UV) detection. To realize a SiC-based image sensor the challenge of opto-electronic on-chip integration of SiC photodetectors and digital electronic circuits must be addressed. Here, we demonstrate a novel SiC image sensor based on our in-house bipolar technology. The sensing part has 256 (16×16) pixels. The digital circuit part for row and column selection contains two 4-to-16 decoders and one 8-bit counter. The digital circuits are designed in transistor-transistor logic (TTL). The entire circuit has 1959 transistors. It is the first demonstration of SiC opto-electronic on-chip integration. The function of the image sensor up to 400 • C has been verified by taking photos of the spatial patterns masked from UV light. The image sensor would play a significant role in UV photography, which has important applications in astronomy, clinics, combustion detection and art. INDEX TERMS Silicon carbide (SiC), image sensor, ultraviolet (UV), photodiode, high temperature, bipolar junction transistor (BJT), transistor-transistor logic (TTL).

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Section: Design and Fabricationmentioning

confidence: 99%

Section: Design and Fabricationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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A Silicon Carbide 256 Pixel UV Image Sensor Array Operating at 400 °C

Hou

Shakir

Hellström

et al. 2020

IEEE J. Electron Devices Soc.

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“…Design of the PDK begins with the modeling and characterization of an NPN-bipolar transistor. The in-house SiC BJT low-voltage process technology optimization is described in [23]. The fabricated test structures are measured on the wafer using a hot-chuck probe-station, KEITHLEY SCS-4200 parameter analyzer, and Keysight parameter extraction and optimization software IC-CAP.…”

Section: Test-structures Ht Measurements and Modelingmentioning

confidence: 99%

“…The passivation oxide was made by plasma enhanced chemical vapor deposition (PECVD) of 100 nm SiO 2 with post-deposition annealing. More details on the SiC low power fabrication process are reported in [17,23]. The circuits have two levels of interconnects.…”

Section: Fabricationmentioning

confidence: 99%

Towards Silicon Carbide VLSI Circuits for Extreme Environment Applications

et al. 2019

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A Process Design Kit (PDK) has been developed to realize complex integrated circuits in Silicon Carbide (SiC) bipolar low-power technology. The PDK development process included basic device modeling, and design of gate library and parameterized cells. A transistor–transistor logic (TTL)-based PDK gate library design will also be discussed with delay, power, noise margin, and fan-out as main design criterion to tolerate the threshold voltage shift, beta ( β ) and collector current ( I C ) variation of SiC devices as temperature increases. The PDK-based complex digital ICs design flow based on layout, physical verification, and in-house fabrication process will also be demonstrated. Both combinational and sequential circuits have been designed, such as a 720-device ALU and a 520-device 4 bit counter. All the integrated circuits and devices are fully characterized up to 500 °C. The inverter and a D-type flip-flop (DFF) are characterized as benchmark standard cells. The proposed work is a key step towards SiC-based very large-scale integrated (VLSI) circuits implementation for high-temperature applications.

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Process Control and Optimization of 4H-SiC Semiconductor Devices and Circuits

Cited by 2 publications

References 8 publications

A Silicon Carbide 256 Pixel UV Image Sensor Array Operating at 400 °C

A Silicon Carbide 256 Pixel UV Image Sensor Array Operating at 400 °C

Towards Silicon Carbide VLSI Circuits for Extreme Environment Applications

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