Process development and integration of double-side Poly-Si passivated solar cells with printed contacts via LPCVD and ex-situ tube diffusion

Yan, Xiaoxiao; Suhaimi, Firdaus Bin; Xu, Menglei; Yang, Jie; Zhang, Xinyu; Wang, Qi; Jin, Hao; Duttagupta, Shubham

doi:10.1016/j.solmat.2021.111249

Cited by 9 publications

(3 citation statements)

References 26 publications

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“…Yan et al [67] apresentaram o desenvolvimento de células solares TOPCon com camadas de poli-Si n + e p + depositadas na face frontal e posterior, respectivamente, por LPCVD e difusão em forno com tubo de quartzo. Com a integração adequada do processo, as células solares têm um filme de 20 nm de poli-Si n + na superfície texturada frontal e de ~150 nm de poli-Si p + na superfície posterior polida.…”

Section: Células Solares Topconunclassified

Revisão sistemática de células solares de silício base n: estruturas e eficiências

et al. 2022

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Resumo Células solares com emissor e face posterior passivada (PERC, passivated emitter and rear cell) vêm dominando o mercado fotovoltaico em razão de seu processo de fabricação ser compatível com as linhas industriais que vinham sendo utilizadas e pela produção de dispositivos de alta eficiência. Atualmente o silício tipo p é o mais utilizado pela indústria de células solares, mas o silício tipo n deve ganhar mercado nos próximos anos juntamente com o emprego de lâminas de espessura reduzida. O objetivo deste trabalho é apresentar uma revisão sistemática dos principais estudos na área de células solares base n, sendo elas do tipo PERC, PERT (passivated emitter-rear totally diffused) e TOPCon (tunnel oxide passivated contact), com ênfase para a abordagem de contatos seletivos, emissores seletivos e nos processos utilizados, bem como na análise de células solares de espessura reduzida em relação ao padrão da indústria atual.

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Section: Células Solares Topconunclassified

Revisão sistemática de células solares de silício base n: estruturas e eficiências

et al. 2022

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“…Increasing the efficiency of crystalline silicon (c-Si) solar cells is an effective approach for reducing the levelized cost of electricity (LCOE). − Since the 1980s, passivated emitter and rear cell (PERC) structures have been widely used to lower the LCOE. − However, the conversion efficiency of PERC solar cells is stagnant, at approximately 25%. ,, As an alternative, carrier-selective passivating contact structures have been gaining attention for next-generation c-Si solar cells, as they collect carriers more effectively than p–n junctions. ,,, One of the most well-known carrier-selective passivating contact structures is fabricated by forming doped poly-Si − on top of ultrathin SiO x − followed by annealing. The poly-Si/SiO x structure shows excellent carrier selectivity and has been used as either a tunnel oxide passivating contact (TOPCon) ,, or a poly-Si on oxide (POLO). ,, Figure a shows the band diagram of c-Si solar cells with a poly-Si/SiO x structure for both electron and hole contacts.…”

Section: Introductionmentioning

confidence: 99%

Design Rule of Electron- and Hole-Selective Contacts for Polycrystalline Silicon-Based Passivating Contact Solar Cells

Mo,

Choi,

et al. 2023

ACS Appl. Mater. Interfaces

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A crystalline silicon (c-Si) solar cell with a polycrystalline silicon/SiO x (poly-Si/SiO x ) structure, incorporating both electron and hole contacts, is an attractive choice for achieving ideal carrier selectivity and serving as a fundamental component in high-efficiency perovskite/Si tandem and interdigitated back-contact solar cells. However, our understanding of the carrier transport mechanism of hole contacts remains limited owing to insufficient studies dedicated to its investigation. There is also a lack of comparative studies on the poly-Si/SiO x electron and hole contacts for ideal carrier-selective solar cells. Therefore, this study aims to address these knowledge gaps by exploring the relationship among microstructural evolution, dopant in-diffusion, and the resulting carrier transport mechanism in both the electron and hole contacts of poly-Si/SiO x solar cells. Electron (n+ poly-Si/SiO x /substrate)- and hole (p+ poly-Si/SiO x /substrate)-selective passivating contacts are subjected to thermal annealing. Changes in the passivation properties and carrier transport mechanisms of these contacts are investigated during thermal annealing at various temperatures. Notably, the results demonstrate that the passivation properties and carrier transport mechanisms are strongly influenced by the microstructural evolution of the poly-Si/SiO x layer stack and dopant in-diffusion. Furthermore, electron and hole contacts exhibit common behaviors regarding microstructural evolution and dopant in-diffusion. However, the hole contacts exhibit relatively inferior electrical properties overall, mainly because both the SiO x interface and the p+ poly-Si are found to be highly defective. Moreover, boron in the hole contacts diffuses deeper than phosphorus in the electron contacts, resulting in deteriorated carrier collection. The experimental results are also supported by device simulation. Based on these findings, design rules are suggested for both electron and hole contacts, such as using thicker SiO x and/or annealing the solar cell at a temperature not exceeding the critical annealing temperature of the hole contacts.

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“…The use of solar energy for seawater desalination is already a relatively mature process, in order to further increase the output rate, based on the original vertical solar distiller, it is designed as a bifacial heat collection [30]. When the research direction is focused on bifacial solar cells, recently, the polysilicon layer created based on low-pressure chemical vapor deposition and tube diffusion has successfully produced a new generation of bifacial polysilicon solar cells [31].…”

Section: Introductionmentioning

confidence: 99%

Experimental and simulation study on bifacial photovoltaic modules integration with buildings

et al. 2022

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Compared with monofacial photovoltaics, bifacial photovoltaic modules can absorb the irradiance on both sides, thereby obtaining more electricity revenue, which can meet more demands. In order to further improve the electrical efficiency of bifacial photovoltaics, this paper proposes a bifacial photovoltaic module with adjustable inclination for simulation and experimental research, which can be well combined with architecture. Under the conditions of different inclination, orientations and heights, the output performance of the bifacial photovoltaic module is analyzed. Under the best inclination, the annual electrical energy of bifacial photovoltaic is about 9.4% higher than that of monofacial photovoltaics. When the spacing between the bifacial photovoltaic and the wall is 1-1.5 times the size of the photovoltaic, the electrical energy will increase the most. Considering the influence of wall color on bifacial photovoltaic performance, the photovoltaic electrical energy under the white wall can reach up to 35% higher than that with respect to the concrete color (dark grey).

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Process development and integration of double-side Poly-Si passivated solar cells with printed contacts via LPCVD and ex-situ tube diffusion

Cited by 9 publications

References 26 publications

Revisão sistemática de células solares de silício base n: estruturas e eficiências

Revisão sistemática de células solares de silício base n: estruturas e eficiências

Design Rule of Electron- and Hole-Selective Contacts for Polycrystalline Silicon-Based Passivating Contact Solar Cells

Experimental and simulation study on bifacial photovoltaic modules integration with buildings

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