2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-A 2016
DOI: 10.1109/imws-amp.2016.7588383
|View full text |Cite
|
Sign up to set email alerts
|

Process development of thick Si interposer for 2.5D integration of RF MEMS devices

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2024
2024
2024
2024

Publication Types

Select...
1

Relationship

0
1

Authors

Journals

citations
Cited by 1 publication
(1 citation statement)
references
References 12 publications
0
1
0
Order By: Relevance
“…2) The manufacturing process of adopting standard BGA for external connection without various RF and DC connectors is highly normative and universal. Therefore, the manufacturing period of new products is shortened and the manufacturing cost is reduced, which is more suitable for batch production [14][15][16].…”
Section: Introductionmentioning
confidence: 99%
“…2) The manufacturing process of adopting standard BGA for external connection without various RF and DC connectors is highly normative and universal. Therefore, the manufacturing period of new products is shortened and the manufacturing cost is reduced, which is more suitable for batch production [14][15][16].…”
Section: Introductionmentioning
confidence: 99%