Process driven oxygen redistribution and control in Si0.7Ge0.3/HfO2/TaN gate stack film systems

Abstract

Articles you may be interested inEffect of NH3 plasma treatment on the interfacial property between ultrathin HfO2 and strained Si0.65Ge0.35 substrate J. Appl. Phys. 113, 044105 (2013); 10.1063/1.4788907 HfO x N y gate dielectric on p -GaAs Appl. Phys. Lett. 94, 073502 (2009); Effects of N 2 remote plasma nitridation on the structural and electrical characteristics of the Hf O 2 gate dielectrics grown using remote plasma atomic layer deposition methods J. Vac. Sci. Technol. A 24, 900 (2006); 10.1116/1.2198865High-performance TaN/HfSiON/Si metal-oxide-semiconductor structures prepared by NH 3 post-deposition anneal Appl.Bulk and surface sensitive photoemission core line spectra have been acquired for Si and Ge following each step in the process sequence of Si 0.7 Ge 0.3 /2 nm HfO 2 /2.5 nm TaN/950 C gate stack film systems. Extended x-ray absorption fine structure measurements have confirmed Ge segregation and pileup to form a Ge-rich layer at the SiGe surface during Si oxidation. Transmission electron micrograph cross-sections with electron energy loss element profiles have verified the effectiveness of plasma nitridation for restricting SiGe oxidation and achieving <1 nm equivalent oxide thickness with gate leakage current density equivalent to that of Si substrates without the necessity of a Si cap for oxidation control.

Ni-(In,Ga)As Alloy Formation Investigated by Hard-X-Ray Photoelectron Spectroscopy and X-Ray Absorption Spectroscopy

“…Below the critical angle, total external reflection occurs. The XAS signal is entirely bulk sensitive at an incidence angle of 1° [23], where an incidence angle of 90°is normal to the sample surface.…”