Process induced damage: what challenges lie ahead?

Dao, Thuy

doi:10.1109/ppid.2003.1200912

Cited by 6 publications

(5 citation statements)

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“…The use of high-density plasma sources, such as inductively coupled plasma (ICP) and electroncyclotron-resonance (ECR) plasma, has been important for developing precise surface processes. However, these sources have problems, including radiation damage caused by charge buildup from positive ions and electrons [1][2][3][4] and by ultraviolet (UV), vacuum ultraviolet (VUV) and x-ray photons [5][6][7][8][9][10][11][12]. High-density crystal defects are generated and material structures are destroyed by UV or VUV photons radiating from the plasma to the etched surface [13].…”

Section: Introductionmentioning

confidence: 99%

Damage-free surface treatment of carbon nanotubes and self-assembled monolayer devices using a neutral beam process for fusing top–down and bottom–up processes

Samukawa¹,

Ishikawa²,

Okumura³

et al. 2008

J. Phys. D: Appl. Phys.

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Plasma etching processes have been used for the past 30 years to shrink the pattern size of integrated devices. However, the inherent problems of plasma processes, such as ultraviolet photon radiation damage, limit the effectiveness of etching and surface treatments of nanoscale devices. To overcome these problems, we developed a neutral beam surface treatment process. The process uses neutral beams and a defect-free surface process to fabricate carbon nanotubes and self-assemble mono-layer devices. We found that neutral beams can be used to produce atomically defect-free surfaces in carbon nanotubes and organic molecules. This technique has potential for fabricating nanodevices.

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Section: Introductionmentioning

confidence: 99%

Damage-free surface treatment of carbon nanotubes and self-assembled monolayer devices using a neutral beam process for fusing top–down and bottom–up processes

Samukawa¹,

Ishikawa²,

Okumura³

et al. 2008

J. Phys. D: Appl. Phys.

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“…High-density plasma sources, such as inductively coupled plasma (ICP) and electron-cyclotron-resonance (ECR) plasma, are key technologies for developing precise etching processes. The disadvantages of these technologies include several types of radiation damage caused by the charge buildup of positive ions and electrons [1][2][3][4] or by the radiation of UV, vacuum UV (VUV), and X-ray photons [5][6][7][8][9][10][11][12] during etching. The voltages generated by charge build-up distort ion trajectories and lead to breakage of thin gate oxide films, stoppage of the etching, and pattern dependence of the etching rate.…”

Section: Introductionmentioning

confidence: 99%

Ultimate Top-down Etching Processes for Future Nanoscale Devices: Advanced Neutral-Beam Etching

Samukawa

2006

jjap

139

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For the past 30 years, plasma etching technology has led in the efforts to shrink the pattern size of ultralarge-scale integrated (ULSI) devices. However, inherent problems in the plasma processes, such as charge buildup and UV photon radiation, limit the etching performance for nanoscale devices. To overcome these problems and fabricate sub-10-nm devices in practice, neutral-beam etching has been proposed. In this paper, I introduce the ultimate etching processes using neutral-beam sources and discuss the fusion of top-down and bottom-up processing for future nanoscale devices. Neutral beams can perform atomically damage-free etching and surface modification of inorganic and organic materials. This technique is a promising candidate for the practical fabrication technology for future nano-devices.

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“…1, also the formation of surface defects (dangling bond) of over a few tens nm in depth by exposure to ultraviolet (UV) emissions from the plasma. [1][2][3][4] In particular, since nano-scale devices have a larger surface area compared with the bulk material, plasma processes can have a large influence on the electrical and optical properties of devices due to process-induced defects caused by ultraviolet exposure, which has not caused a problem in the presented devices of 32 nm. Furthermore, since future nanodevices will require size control of three-dimensional structures at the atomic layer level, it will be absolutely essential to control surface chemical reactions with high precision and selectivity at the atomic layer level.…”

mentioning

confidence: 99%

A Neutral Beam Process for Controlling Surface Defect Generation and Chemical Reactions at the Atomic Layer

Samukawa

2015

ECS J. Solid State Sci. Technol.

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Advances in plasma process technology have contributed directly to advances in the miniaturization and integration of semiconductor devices. However, in semiconductor devices that encroach on the nanoscale domain, defects or damage can be caused by charged particles and ultraviolet rays emitted from the plasma, severely impairing the characteristics of nano-devices that have a larger surface than bulk areas. It is therefore essential to develop a method for suppressing or controlling charge accumulation and ultraviolet damage in plasma processing. The neutral beam process developed by the authors is a method that suppresses the formation of defects at the atomic layer level in the processed surface, allowing ideal surface chemical reactions to take place at room temperature. We are using this technique to develop future innovative nanodevices.

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Process induced damage: what challenges lie ahead?

Cited by 6 publications

References 0 publications

Damage-free surface treatment of carbon nanotubes and self-assembled monolayer devices using a neutral beam process for fusing top–down and bottom–up processes

Damage-free surface treatment of carbon nanotubes and self-assembled monolayer devices using a neutral beam process for fusing top–down and bottom–up processes

Ultimate Top-down Etching Processes for Future Nanoscale Devices: Advanced Neutral-Beam Etching

A Neutral Beam Process for Controlling Surface Defect Generation and Chemical Reactions at the Atomic Layer

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