Process integration of fine pitch Cu redistribution wiring and SnCu micro-bumping for power efficient LSI devices with high-bandwidth stacked DRAM

Ezawa, Hirokazu; Togasaki, Takashi; Migita, Tatsuo; Yamashita, Shota; Inohara, M.; Koshio, Yasuhiro; Fukuda, M.; Miyata, Masahiro; Tatsumi, Kohei

doi:10.1016/j.mee.2012.08.009

Cited by 3 publications

(2 citation statements)

References 12 publications

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“…However, wafer sliding may impair the accuracy of post-bonding alignment due to thicker bumps in TLP bonding [179]. The most popular TLP material has historically been Cu-Sn owing to a low-temperature process (260 • C) and scalability [180][181][182][183]. Moreover, TLP bonding for 3D integration has utilized Au-Sn and Au-In [184][185][186].…”

Section: Metal Bondingmentioning

confidence: 99%

Advanced 3D Through-Si-Via and Solder Bumping Technology: A Review

Jang,

Sharma,

Jung

2023

Materials

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Three-dimensional (3D) packaging using through-Si-via (TSV) is a key technique for achieving high-density integration, high-speed connectivity, and for downsizing of electronic devices. This paper describes recent developments in TSV fabrication and bonding methods in advanced 3D electronic packaging. In particular, the authors have overviewed the recent progress in the fabrication of TSV, various etching and functional layers, and conductive filling of TSVs, as well as bonding materials such as low-temperature nano-modified solders, transient liquid phase (TLP) bonding, Cu pillars, composite hybrids, and bump-free bonding, as well as the role of emerging high entropy alloy (HEA) solders in 3D microelectronic packaging. This paper serves as a guideline enumerating the current developments in 3D packaging that allow Si semiconductors to deliver improved performance and power efficiency.

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Section: Metal Bondingmentioning

confidence: 99%

Advanced 3D Through-Si-Via and Solder Bumping Technology: A Review

Jang,

Sharma,

Jung

2023

Materials

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“…Copper plating onto PI films is a well-used process in the fabrication of the interconnections in microelectronic devices such as flexible printed circuit board (FPCB) and ultra large-scale integration (ULSI) [1][2][3]. Recently, demands for the fabrication technologies of fine Cu patterns on a PI film have increased due to the increase in demand for miniaturization and performance enhancement of electronic devices [4,5].…”

Section: Introductionmentioning

confidence: 99%

Selective Cu Patterning on Polyimide Using UV Surface Treatment and Electroless Plating

Youn

Suzuki

Park

et al. 2015

J. Photopol. Sci. Technol.

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Needs for an inexpensive and simple technology for fabricating fine copper (Cu) patterns on a polyimide (PI) film have been increasing. In this study, vacuum-UV induced surfactant masking (VISM) process was proposed as a tool for simplifying selective electroless Cu plating. The electroless Cu plating process using VISM is capable of Cu patterning on solvent-soluble siloxane-modified polyimide (PI) without photoresist patterning steps unlike conventional electroless Cu plating process. The relation between the wettability of SBC-PI film surface and the UV/Ozone treatment time was investigated to establish VISM process condition. The feasibility of the proposed process was verified by demonstrating the fabrication of Cu/PI patterns with widths ranging from 5 μm to 50 μm and measuring an electric property of some patterns.

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Microsystems using three-dimensional integration and TSV technologies: Fundamentals and applications

Wang

2019

Microelectronic Engineering

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Process integration of fine pitch Cu redistribution wiring and SnCu micro-bumping for power efficient LSI devices with high-bandwidth stacked DRAM

Cited by 3 publications

References 12 publications

Advanced 3D Through-Si-Via and Solder Bumping Technology: A Review

Advanced 3D Through-Si-Via and Solder Bumping Technology: A Review

Selective Cu Patterning on Polyimide Using UV Surface Treatment and Electroless Plating

Microsystems using three-dimensional integration and TSV technologies: Fundamentals and applications

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