Process modeling of reactive sputtering

Berg, Sören; Blom, Hans‐Olof; Moradi, Mona; Nender, C; Larsson, T.

doi:10.1116/1.576259

Cited by 98 publications

(25 citation statements)

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“…The Ba-rich and Sr-rich conditions are similar to those obtained in direct current arc discharge 3.95 ± 4 − 4 0.00112 ± 6 − 6 0.999 plasma process [5]. Composition also may be affected by changes in target erosion and total gas pressure during the sputtering process [13]. Additional discrepancies may be due to stress originated by the difference in size of Ba and Sr cations and to the different phases present in addition to the main one, interplanar spacing from XRD data is sensitive to these EDS measurements.…”

Section: Resultssupporting

confidence: 58%

“…However, the presence of the metastable tetragonal phase is possible due to the presence of oxygen vacancies [11,12]. On the other hand, reactive sputtering modelling has been widely studied since the early work of Berg et al [13]. Berg's and other models such as that developed by Strijckmans and Depla [14] take into account the nonlinearity inherent to the sputter deposition process involving reactive species.…”

Section: Introductionmentioning

confidence: 99%

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Stoichiometry Calculation in Ba_xSr_1−xTiO₃ Solid Solution Thin Films, Prepared by RF Cosputtering, Using X-Ray Diffraction Peak Positions and Boltzmann Sigmoidal Modelling

Reséndiz-Muñoz

Fernández-Muñoz

Corona-Rivera

et al. 2017

Journal of Nanomaterials

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A novel procedure based on the use of the Boltzmann equation to model the parameter, the film deposition rate, and the optical band gap of Ba x Sr 1−x TiO 3 thin films is proposed. The Ba x Sr 1−x TiO 3 films were prepared by RF cosputtering from BaTiO 3 and SrTiO 3 targets changing the power applied to each magnetron to obtain different Ba/Sr contents. The method to calculate consisted of fitting the angular shift of (110), (111), and (211) diffraction peaks observed as the density of substitutional Ba 2+ increases in the solid solution when the applied RF power increases, followed by a scale transformation from applied power to parameter using the Boltzmann equation. The Ba/Sr ratio was obtained from X-ray energy dispersive spectroscopy; the comparison with the X-ray diffraction derived composition shows a remarkable coincidence while the discrepancies offer a valuable diagnosis on the sputtering flux and phase composition. The proposed method allows a quick setup of the RF cosputtering system to control film composition providing a versatile tool to optimization of the process.

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Section: Resultssupporting

confidence: 58%

Section: Introductionmentioning

confidence: 99%

Stoichiometry Calculation in Ba_xSr_1−xTiO₃ Solid Solution Thin Films, Prepared by RF Cosputtering, Using X-Ray Diffraction Peak Positions and Boltzmann Sigmoidal Modelling

Reséndiz-Muñoz

Fernández-Muñoz

Corona-Rivera

et al. 2017

Journal of Nanomaterials

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“…216 The presence of reactive gas can also lead to the formation of compound material on the target surface, often referred to as target coverage or target poisoning. 217 Due to this target coverage the reactive sputtering process is inherently unstable, and is commonly represented in a familiar hysteresis curve that shows, e.g., the deposition rate or the target voltage versus the flow rate of the reactant molecular gas. 218 The target voltage versus oxygen flow rate for a dcMS while sputtering a Ce target in an Ar/O 2 discharge is shown in Fig.…”

Section: E Reactive Sputteringmentioning

confidence: 99%

High power impulse magnetron sputtering discharge

Guðmundsson¹,

Brenning²,

Lundin³

et al. 2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

636

446

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The high power impulse magnetron sputtering (HiPIMS) discharge is a recent addition to plasma based sputtering technology. In HiPIMS, high power is applied to the magnetron target in unipolar pulses at low duty cycle and low repetition frequency while keeping the average power about 2 orders of magnitude lower than the peak power. This results in a high plasma density, and high ionization fraction of the sputtered vapor, which allows better control of the film growth by controlling the energy and direction of the deposition species. This is a significant advantage over conventional dc magnetron sputtering where the sputtered vapor consists mainly of neutral species. The HiPIMS discharge is now an established ionized physical vapor deposition technique, which is easily scalable and has been successfully introduced into various industrial applications. The authors give an overview of the development of the HiPIMS discharge, and the underlying mechanisms that dictate the discharge properties. First, an introduction to the magnetron sputtering discharge and its various configurations and modifications is given. Then the development and properties of the high power pulsed power supply are discussed, followed by an overview of the measured plasma parameters in the HiPIMS discharge, the electron energy and density, the ion energy, ion flux and plasma composition, and a discussion on the deposition rate. Finally, some of the models that have been developed to gain understanding of the discharge processes are reviewed, including the phenomenological material pathway model, and the ionization region model.

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“…[59,60] The compound film formation at the target surface is known as target poisoning. [61] The transition between the metallic and poisoned target surface conditions is often observed as sudden changes in the cathode voltage and current, gas pressure, and deposition rate. [62,63] The high peak powers used in HiPIMS allow better control over the onset of target poisoning by efficiently removing the poisoned surface layer during the pulse.…”

Section: Reactive Hipimsmentioning

confidence: 99%

Silicon Oxynitride Thin Films Grown by Reactive HiPIMS

Hänninen¹

2015

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Amorphous silicon oxynitride (SiO x N y ) thin films were grown by reactive high power impulse magnetron sputtering from a pure silicon target in Ar/N 2 O plasmas. The elemental composition of the films was shown to depend on the target surface conditions during the film deposition, as well as on the reactive gas flow rate. When the target was sputtered under poisoned surface conditions, the film composition was predominantly silicon oxide, whereas films deposited in the transition regime between poisoned and metallic target surface conditions showed higher nitrogen concentrations, as measured by X-ray photoelectron spectroscopy (XPS) and elastic recoil detection analysis (ERDA). The different target surface conditions were identified based on the evolution of the target current waveforms upon variation of the deposition parameters. The average electron temperatures during the peak target current were determined by Langmuir probe measurements, to assist with the explanation of the observed target current behavior and target poisoning characteristics.The chemical composition of the films was shown to range from silicon-rich to effectively stoichiometric silicon oxynitrides, where no Si−Si contributions were found in the XPS Si 2p core level spectra. The film optical properties, the refractive index n and the extinction coefficient k, were shown to depend on the film chemical bonding, with the effectively stoichiometric films displaying optical properties falling between those of SiO 2 and Si 3 N 4 .iii iv Acknowledgments

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Process modeling of reactive sputtering

Cited by 98 publications

References 0 publications

Stoichiometry Calculation in Ba_xSr_1−xTiO₃ Solid Solution Thin Films, Prepared by RF Cosputtering, Using X-Ray Diffraction Peak Positions and Boltzmann Sigmoidal Modelling

Stoichiometry Calculation in Ba_xSr_1−xTiO₃ Solid Solution Thin Films, Prepared by RF Cosputtering, Using X-Ray Diffraction Peak Positions and Boltzmann Sigmoidal Modelling

High power impulse magnetron sputtering discharge

Silicon Oxynitride Thin Films Grown by Reactive HiPIMS

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Process modeling of reactive sputtering

Cited by 98 publications

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Stoichiometry Calculation in BaxSr1−xTiO3 Solid Solution Thin Films, Prepared by RF Cosputtering, Using X-Ray Diffraction Peak Positions and Boltzmann Sigmoidal Modelling

Stoichiometry Calculation in BaxSr1−xTiO3 Solid Solution Thin Films, Prepared by RF Cosputtering, Using X-Ray Diffraction Peak Positions and Boltzmann Sigmoidal Modelling

High power impulse magnetron sputtering discharge

Silicon Oxynitride Thin Films Grown by Reactive HiPIMS

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Stoichiometry Calculation in Ba_xSr_1−xTiO₃ Solid Solution Thin Films, Prepared by RF Cosputtering, Using X-Ray Diffraction Peak Positions and Boltzmann Sigmoidal Modelling

Stoichiometry Calculation in Ba_xSr_1−xTiO₃ Solid Solution Thin Films, Prepared by RF Cosputtering, Using X-Ray Diffraction Peak Positions and Boltzmann Sigmoidal Modelling