Process of negative-muon-induced formation of an ionized acceptor center (μA)– in crystals with the diamond structure

Belousov, Yu. M.

doi:10.1134/s106377611613001x

Cited by 3 publications

(3 citation statements)

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“…As was shown in [36], the capture rate to the p-state w p is approximately two orders less than the capture rate to s-state w s . Therefore, in the following, we can consider the electron capture to the s-state.…”

Section: Electron Capture Ratementioning

confidence: 78%

“…An exact solution of the problem taking into account a crystal symmetry is scarcely possible. However, qualitative estimations can be obtained in some approximations [35,36].…”

Section: Formation Of An Ionized Acceptor Centermentioning

confidence: 99%

“…Detailed calculations of an ionized acceptor center formation in diamond, silicon and germanium were carried out in [35,36], and here, we will present the main results. The electric dipole moment creates a scalar potential, and the interaction energy with lattice electrons is U = eϕ = e(dr)/(εr 3 ), where ε is a dielectric penetration.…”

Section: Effective Hamiltonian and Interaction Operatormentioning

confidence: 99%

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Evolution in Time of Radiation Defects Induced by Negative Pions and Muons in Crystals with a Diamond Structure

Belousov

2017

Crystals

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Evolution in time of radiation defects induced by negatively-charged pions and muons in crystals with diamond structures is considered. Negative pions and muons are captured by the nucleus and ionize an appropriate host atom, forming a positively-charged radiation defect in a lattice. As a result of an evolution in time, this radiation defect transforms into the acceptor center. An analysis of the full evolution process is considered for the first time. Formation of this acceptor center can be divided into three stages. At the first stage, the radiation defect interacts with a radiation trace and captures electrons. The radiation defect is neutralized completely in Si and Ge for a short time t ≤ 10 −11 s, but in diamond, the complete neutralization time is very large t ≥ 10 −6 s. At the second stage, broken chemical bonds of the radiation defect are restored. In Si and Ge, this process takes place for the neutral radiation defect, but in diamond, it goes for a positively-charged state. The characteristic time of this stage is t < 10 −8 s for Si and Ge and t < 10 −11 s for diamond. After the chemical bonds' restoration, the positively-charged, but chemically-bound radiation defect in diamond is quickly neutralized because of the electron density redistribution. The neutralization process is characterized by the lattice relaxation time. At the third stage, a neutral chemically-bound radiation defect captures an additional electron to saturate all chemical bonds and forms an ionized acceptor center. The existence of a sufficiently big electric dipolar moment leads to the electron capture. Qualitative estimates for the time of this process were obtained for diamond, silicon and germanium crystals. It was sown that this time is the shortest for diamond (≤10 −8 s) and the longest for silicon (≤10 −7 s)

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Section: Electron Capture Ratementioning

confidence: 78%

“…An exact solution of the problem taking into account a crystal symmetry is scarcely possible. However, qualitative estimations can be obtained in some approximations [35,36].…”

Section: Formation Of An Ionized Acceptor Centermentioning

confidence: 99%

Section: Effective Hamiltonian and Interaction Operatormentioning

confidence: 99%

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