Process-orientated physics-based modeling of microwave power transistors: Small- and large-signal characterization

Abstract

-The coupling between charge transport, heat and energy flow required to model high frequency power devices is developed in the context of a computationally efficient physicsbased model, which has been successfully applied to microwave laterally diffused MOS transistors. The accurate prediction of small-and large-signal microwave characteristics, and the physical insight gained, can be used in the process-orientated optimization and process sensitivity analysis of LDMOS power FETs. The charge-based model is well-suited to non-linear CAD implementation for applications such as power amplifier design.Index Terms -Field effect transistor (FET), laterally diffused metal-oxide-semiconductor (LDMOS), power amplifiers.