Process parameters simulation and analysis of a new reactor for high temperature MOCVD AlGaN growth

Abstract

Commercially, metal organic chemical vapor deposition (MOCVD) is a typical and effective approach to the AlGaN film growth. It is believed that high temperature growth condition is favorable for improving efficiency and crystallization quality for the film. However, problems such as low growth rate and poor crystallization quality are common in the growing process. Considering the process conditions, such as operating pressure, gas flow rate and rotation speed, and to ensure the uniformity of growth rate and substrate thickness, a new high-temperature reactor is proposed in this paper. The process parameters were optimized by CFD simulation and the finite element analysis was conducted on the temperature field, pressure field, velocity field, density field and other physical fields. These conditions make the flow field in the reactor stable and ensure the thickness uniformity of the deposited films. These research not only provide an effective solution for high quality MOCVD AlGaN growth, but also provide a theoretical basis for experiments and equipment improvement that follows.