Process Physics of the Iron-Boron Pair Recombination and Dissociation in p-Type Silicon

Abstract

The process physics of the iron-boron pair recombination and dissociation in p-type silicon at temperatures below 300°C was studied. The result indicates that the recombination and dissociation processes depend strongly upon the relative position of the ionization energy of interstitial iron Efe+ and the Fermi level Ef. At temperatures T < (Efe+ - Ep)/k, the pairing reaction obeys first-order reaction kinetics while at temperatures T > (EFe+ - Ep)/k, an equilibrium between neutral and charged defect species prevails.