1999
DOI: 10.1116/1.590666
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Process window and mechanism of surface property enhancement of 9Cr18 steel using plasma immersion ion implantation

Abstract: Articles you may be interested inCorrosion behavior of Zr modified CrN coatings using metal vapor vacuum arc ion implantation Structural modifications and corrosion behavior of martensitic stainless steel nitrided by plasma immersion ion implantation J. Vac. Sci. Technol. A 23, 693 (2005); 10.1116/1.1931681 Enhancement of tribological properties of 9Cr18 stainless steel by dual Mo and S Co implantation

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Cited by 8 publications
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“…PIII can also serve as a pretreatment step for subsequent film deposition. By implanting the proper gaseous and/or metallic elements into the materials, characteristics such as film adhesion can be enhanced and thermal stress between the deposited and bulk materials can be allayed [38][39][40][41]. However, although PIII excels in the treatment of components with a complex geometry compared to beam-line ion implantation, the dose uniformity may not be very good unless the process is optimized.…”
Section: Plasma Implantationmentioning
confidence: 99%
“…PIII can also serve as a pretreatment step for subsequent film deposition. By implanting the proper gaseous and/or metallic elements into the materials, characteristics such as film adhesion can be enhanced and thermal stress between the deposited and bulk materials can be allayed [38][39][40][41]. However, although PIII excels in the treatment of components with a complex geometry compared to beam-line ion implantation, the dose uniformity may not be very good unless the process is optimized.…”
Section: Plasma Implantationmentioning
confidence: 99%
“…Plasma immersion ion implantation ͑PIII͒ is a versatile materials fabrication and surface treatment technique. [1][2][3][4] Its nonline-of-sight advantage renders it an excellent technique to enhance the properties and performance of large and irregular-shaped industrial components. 1,[5][6][7] For example, it is being applied to synthesize silicon-on-insulator substrates for low-power, high-speed complementary metal-oxidesilicon microelectronics chips.…”
Section: Introductionmentioning
confidence: 99%