Processes limiting the performance of InAs/GaSb superlattice mid-infrared PIN mesa photodiodes

Diode Characteristics Approaching Bulk Limits in GaAs Nanowire Array Photodetectors

“…The primary criticism of nanowire devices is the large surface-to-volume ratio and the deleterious effect of surface states on electrical properties. Indeed, for thin film devices involving mesa etching, the etched surface presents a problem as the diameter of the mesa becomes small, eventually dominating the carrier transport in the device. , As a result, ex situ passivation of the etched sidewalls is necessary to minimize these effects. , Nanowire growth and fabrication is intrinsically different in that there is no postgrowth etching required, and therefore no ex situ passivation is required; all sidewalls are passivated through in situ growth of a high-bandgap shell. To date, however, all demonstrations of nanowire devices have been inferior to their thin film counterparts in most performance metrics, including ideality factor and dark current density.…”

“…Let us define the junction dark current density as J j = I / A j and the effective dark current density as J eff = I / A eff . In the literature, the dark current density of multinanowire devices is typically normalized using A eff . − This is likely due to the difficulty in estimating F for arrays grown by gold-catalyzed methods, which yield randomly distributed nanowires of varying diameters. The lack of an accurate estimate of F makes the comparison of J j difficult, if not impossible.…”

The investigation of quantum efficiency constituents of InAs/AlSb/GaSb based N structure type-II SL photodetectors with InAlAs interface

“…where QE , N QE DR and QE P are constituents of quantum efficiencies from n, depletion region and p regions, respectively. [19], x , n x p and x DR are the thickness of n, p and depletion regions as calculated in our previous studies [14,20]). The device parameters used in the calculations are listed in table 1.…”