Processing and characterization of edgeless radiation detectors for large area detection

Kalliopuska, J.; Wu, Xiaopeng; Jakůbek, J.; Eränen, Simo; Virolainen, Tuula

doi:10.1016/j.nima.2013.06.097

Cited by 12 publications

(13 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The feasibility of employing thin planar pixel detectors for the inner layers of the upgraded ATLAS pixel system is being investigated, comparing the performance of sensors in the thickness range of 100-200 µm. Using the SOI technology, n-in-p sensors with a full thickness of 100 and 200 µm were produced on 6" wafers at VTT in the framework of a Multi-project Wafer run (MPW) [6].…”

Section: Introductionmentioning

confidence: 99%

Development of n-in-p pixel modules for the ATLAS upgrade at HL-LHC

Macchiolo¹,

Nisius²,

Savic³

et al. 2016

Nuclear Instruments and Methods in Physics Research Section A:

View full text Add to dashboard Cite

Thin planar pixel modules are promising candidates to instrument the inner layers of the new ATLAS pixel detector for HL-LHC, thanks to the reduced contribution to the material budget and their high charge collection efficiency after irradiation. 100-200 µm thick sensors, interconnected to FE-I4 read-out chips, have been characterized with radioactive sources and beam tests at the CERN-SPS and DESY. The results of these measurements are reported for devices before and after irradiation up to a fluence of 14 × 10 15 n eq /cm 2 . The charge collection and tracking efficiency of the different sensor thicknesses are compared. The outlook for future planar pixel sensor production is discussed, with a focus on sensor design with the pixel pitches (50x50 and 25x100 µm 2 ) foreseen for the RD53 Collaboration read-out chip in 65 nm CMOS technology. An optimization of the biasing structures in the pixel cells is required to avoid the hit efficiency loss presently observed in the punch-through region after irradiation. For this purpose the performance of different layouts have been compared in FE-I4 compatible sensors at various fluence levels by using beam test data. Highly segmented sensors will represent a challenge for the tracking in the forward region of the pixel system at HL-LHC. In order to reproduce the performance of 50x50 µm 2 pixels at high pseudo-rapidity values, FE-I4 compatible planar pixel sensors have been studied before and after irradiation in beam tests at high incidence angle (80• ) with respect to the short pixel direction. Results on cluster shapes, charge collection and hit efficiency will be shown.

show abstract

Section: Introductionmentioning

confidence: 99%

Development of n-in-p pixel modules for the ATLAS upgrade at HL-LHC

Macchiolo¹,

Nisius²,

Savic³

et al. 2016

Nuclear Instruments and Methods in Physics Research Section A:

View full text Add to dashboard Cite

show abstract

“…The basic electrical characterization (IV , CV , etc.) of both p-on-p and p-on-n sensors has been reported in the reference [11]. The electrical contacts of the sensors are DC-coupled.…”

Section: Device and Fabricationmentioning

confidence: 99%

“…Since the measured leakage current was roughly 3-fold higher in the p-on-n sensor [11], this required a tuning of the carrier lifetimes (discussed in detail in the following section) to be reproduced in result from figure 8a it can be seen from the R int curve of the p-on-p sensor that after the bulk is fully depleted it still takes ∼2 V to deplete the inter-pixel region. After ∼9 V the pixel isolation between the two sensors is identical.…”

Section: Electrical Characteristicsmentioning

confidence: 99%

Characterization of thin p-on-p radiation detectors with active edges

Peltola¹,

Wu²,

Kalliopuska³

et al. 2016

Nuclear Instruments and Methods in Physics Research Section A:

Self Cite

View full text Add to dashboard Cite

Active edge p-on-p silicon pixel detectors with thickness of 100 µm were fabricated on 150 mm float zone silicon wafers at VTT. By combining measured results and TCAD simulations, a detailed study of electric field distributions and charge collection performances as a function of applied voltage in a p-on-p detector was carried out. A comparison with the results of a more conventional active edge p-on-n pixel sensor is presented. The results from 3D spatial mapping show that at pixel-to-edge distances less than 100 µm the sensitive volume is extended to the physical edge of the detector when the applied voltage is above full depletion. The results from a spectroscopic measurement demonstrate a good functionality of the edge pixels. The interpixel isolation above full depletion and the breakdown voltage were found to be equal to the p-on-n sensor while lower charge collection was observed in the p-on-p pixel sensor below 80 V. Simulations indicated this to be partly a result of a more favourable weighting field in the p-on-n sensor and partly of lower hole lifetimes in the p-bulk.

show abstract

“…Recently, large-area detectors [1]- [5] have been developed for applications requiring a large intercept area in order to detect rare particles with high probability or to rapidly image particle fluences from nuclear and radioactive materials. However, the typically desired property of fixed gain against the supply voltage variation is no longer sustained due to the large detector capacitance formed in large area radiation sensors or in sensors comprised of high permittivity materials, such as lead chalcogenide nanocrystalline detectors [6], [7].…”

Section: Introductionmentioning

confidence: 99%

Experimental Validation of Charge-Sensitive Amplifier Configuration that Compensates for Detector Capacitance

Kwon

Kang

Hammig

2016

IEEE Trans. Nucl. Sci.

View full text Add to dashboard Cite

This paper presents measurement results of a method by which the shapes of the output signals derived from a frontend readout circuit can be made insensitive to the input detector capacitance, to a degree limited only by the accuracy with which one can make an amplifier with unity gain. A charge sensitive amplifier including the detector capacitance compensation technique was implemented in a standard 180-nm CMOS technology with a 3.3-V supply voltage. The results show that the technique can successfully mitigate the performance degradation that accompanies large detector capacitance derived from either largearea radiation sensors and/or high permittivity materials, such as nanocrystalline assemblies. In order to verify the feasibility of the technique, we measured alpha particle spectra on two different sized silicon detectors that have detector capacitances of 1.26 pF and 21.84 pF, derived from 2-mm-and 10-mm-diameter devices, respectively. A configuration for integrating the fabricated preamplifier with a detector is also described to exploit the technique for any other application or experiment. Index Terms-Alpha particle spectroscopy, charge sensitive amplifier (CSA), detector capacitance, front-end circuit, radiation detector, radiation measurement, readout circuit, silicon radiation detector, the Miller effect.

show abstract

Processing and characterization of edgeless radiation detectors for large area detection

Cited by 12 publications

References 9 publications

Development of n-in-p pixel modules for the ATLAS upgrade at HL-LHC

Development of n-in-p pixel modules for the ATLAS upgrade at HL-LHC

Characterization of thin p-on-p radiation detectors with active edges

Experimental Validation of Charge-Sensitive Amplifier Configuration that Compensates for Detector Capacitance

Contact Info

Product

Resources

About