Processing for optically active erbium in silicon by film co-deposition and ion-beam mixing

Abedrabbo, Sufian; Mohammed, Q.; Fiory, A. T.

doi:10.1016/j.apsusc.2008.11.058

Cited by 8 publications

(5 citation statements)

References 32 publications

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“…Owing to inherent uncertainties in analysis based on modeling the reflectivity of dielectric films on substrates, monolithic sol-gel samples are potential alternatives for improving the experimental resolution in the refractive index components. Other low-temperature methods for preparing heavily erbium doped films utilize ion-beam mixing in combination with co-deposition [57] or ion implantation [58]. Accurate measurements of extinction coefficient spectra are of value in determining the effects of erbium doping on absorption edges, optical band gaps, and associated modifications in the glassy framework.…”

Section: Discussionmentioning

confidence: 99%

Optical polarizability of erbium-oxygen complexes in sol-gel-based silica films

Abedrabbo¹,

Lahlouh²,

Fiory³

et al. 2021

J. Phys. D: Appl. Phys.

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For erbium (Er)-doped amorphous oxides, such as those that are used in compact lightwave devices interfaced with silicon, values of the refractive indices are commonly obtained empirically. This work, combining experimental and theoretical studies, examines silica as the exemplary host and the influence of Er doping on the refractive index. Analysis of data is presented for the spectral refractive index in the ultraviolet to near infrared wavelength range of heavily Er-doped silica thin films prepared by spin coating a sol-gel precursor on silicon and subsequent vacuum annealing. Effective medium Lorentz–Lorenz data analysis determines that the dopant component has a refractive index of 1.76 ± 0.24 with wavelength dispersion constrained to within 2%. Considering the dopant as a localized ErO6 impurity complex, a corresponding theoretical refractive index of 1.662 is derived by calculating the optical polarizability and volume of the impurity. Data presented for room-temperature (∼293 K) photoluminescence in the vicinity of 1.54 μm are shown to be consistent with random variability in impurity sites. Inherent advantages of studying colloid-based materials are discussed. To the best of the authors’ knowledge, such a detailed study of the refractive index associated with Er impurities in silica is being reported for the first time in the literature.

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Section: Discussionmentioning

confidence: 99%

Optical polarizability of erbium-oxygen complexes in sol-gel-based silica films

Abedrabbo¹,

Lahlouh²,

Fiory³

et al. 2021

J. Phys. D: Appl. Phys.

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“…The EL spectrum was decomposed using Gaussian curves, as was done in Ref. 9, by fitting the spectrum curve with 10 Gaussian peaks, as shown in Fig. 1(a).…”

Section: Resultsmentioning

confidence: 99%

Electroluminescence from <inline-formula><math display="inline" overflow="scroll"><mrow><msup><mrow><mi>Er</mi></mrow><mrow><mn>3</mn><mo>+</mo></mrow></msup></mrow></math></inline-formula> incorporated into silicon oxide thin film on silicon in a scanning tunneling microscope

2012

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Abstract. A scanning tunneling microscope (STM) with an electrically conductive and optically transparent probe was used to study electroluminescence induced by tunneling electrons from erbium oxide (Er 3 O 3 ) deposited on SiO 2 ∕Sið100Þ. Erbium was primarily incorporated into SiO 2 on silicon substrate to create impurities and overcome a high band gap. Subsequently, emissions of photons in the visible/near-infrared region, because of the excitation of higher Er states, are realized electrically without the need to apply high voltage. The STM-induced photon emission exhibits an asymmetric character with respect to the applied bias, which is explained by the direct recombination and impact ionization processes. The observed electroluminescence spectrum was decomposed to identify single inter-band transitions that could be related to erbium states. STM-induced electron emission measurements were also performed, revealing a band gap of around 2.8 eV. This corresponds to the x ¼ 0.91 rate factor of the SiO x layer created during the annealing process on silicon.

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“…As was explained earlier, the 4f transitions possess some immunity from the host material and the overall symmetry, although the dominant peaks or preferred recombination transitions can vary. As a manifestation to this fact, we would like to bring the attention to the fact that the samples in this work were processed using sol-gel techniques, and that the transitions indicated on page 238 of reference [41] were for Er-doped aluminosilicate, while the ones in the work of Abedrabbo et al in references [42,43] were for ion beam mixing of Er, Si and O and for Er, Si, O and Ge, and all of them shared similar transitions. The ion beam mixing effort of this group started earlier without Er impurity centers as in references [44,45] and was consolidated with rare-earth inclusions.…”

Section: Erbium Emission At the 4f Transition Bandmentioning

confidence: 99%

Synthesis and Characterization of Erbium-Doped Silica Films Obtained by an Acid–Base-Catalyzed Sol–Gel Process

et al. 2023

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Erbium-doped silica films were synthesized using a two-step sol–gel methodology that involved acid and base catalysts, with erbium concentration ranging from 0.2% to 6% and annealing temperatures varying from 500 °C to 900 °C. The photoluminescence spectra showed that the samples exhibiting efficient emission were annealed at 800 °C and 900 °C and doped with 3% and 6% erbium. The X-ray diffraction analysis revealed that the internal structure of the films was influenced by the different annealing temperatures and the doping concentrations. Samples with dominant 4f transitions were modelled. The results suggest that the proposed method is a promising approach for the synthesis of erbium-doped silica films with potential applications in optical devices.

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Processing for optically active erbium in silicon by film co-deposition and ion-beam mixing

Cited by 8 publications

References 32 publications

Optical polarizability of erbium-oxygen complexes in sol-gel-based silica films

Optical polarizability of erbium-oxygen complexes in sol-gel-based silica films

Electroluminescence from <inline-formula><math display="inline" overflow="scroll"><mrow><msup><mrow><mi>Er</mi></mrow><mrow><mn>3</mn><mo>+</mo></mrow></msup></mrow></math></inline-formula> incorporated into silicon oxide thin film on silicon in a scanning tunneling microscope

Synthesis and Characterization of Erbium-Doped Silica Films Obtained by an Acid–Base-Catalyzed Sol–Gel Process

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