In the semiconductor fabrication industry, high-power
plasma is
indispensable to obtain a high aspect ratio of chips. For applications
to ceramic components including the dielectric window and ring in
the semiconductor etching chamber, the Y2O3 ceramics
have attracted interest recently based on excellent erosion resistance.
When a high bias voltage is applied in a plasma environment containing
fluorine gas, both chemical etching and ion bombardment act simultaneously
on the ceramic components. During this etching process, severe erosion
and particles generated on the ceramic surface can have effects on
overall equipment effectiveness. Herein, we report the outstanding
plasma etching resistance of Y2O3–MgO
nanocomposite ceramics under a CF4/Ar/O2 gas
atmosphere; the erosion depth of this material is 40–79% of
that of the reference materials, Y2O3 ceramics.
In a robust approach involving effective control of the microstructure
with different initial particles and sintering conditions, it is possible
to understand the relationship between etching behavior and microstructure
evolution of the nanocomposite ceramic. The results indicate that
the nanocomposite with fine and homogeneous domain distribution can
decrease particle generation and ameliorate its life cycle; accordingly,
this is a promising alternative candidate material for ceramic components
in plasma chambers.