2018
DOI: 10.1007/s12633-018-9983-0
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Processing Methods of Silicon to its Ingot: a Review

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Cited by 15 publications
(1 citation statement)
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“…1f . Most available bulk (boule) growth information is for silicon, due to its technological importance, with Czochralski 23 , Bridgeman 24 , 25 and float zone (FZ) 26 methods prevalent, and both the scientific and patent literature are valuable background resources. Liquid phase epitaxy (LPE) was developed for growth of layered structures in semiconductors, often at temperatures below the bulk melting point of the seed wafer.…”
Section: History and Backgroundmentioning
confidence: 99%
“…1f . Most available bulk (boule) growth information is for silicon, due to its technological importance, with Czochralski 23 , Bridgeman 24 , 25 and float zone (FZ) 26 methods prevalent, and both the scientific and patent literature are valuable background resources. Liquid phase epitaxy (LPE) was developed for growth of layered structures in semiconductors, often at temperatures below the bulk melting point of the seed wafer.…”
Section: History and Backgroundmentioning
confidence: 99%