Processing of AC-coupled n-in-p pixel detectors on MCz silicon using atomic layer deposited aluminium oxide

Ott, J.; Gädda, A.; Bharthuar, S.; Brücken, E.; Golovleva, M.; Härkönen, J.; Kalliokoski, Matti; Karadzhinova-Ferrer, A.; Kirschenmann, S.; Litichevskyi, V.; Luukka, P.; Martikainen, L.; Naaranoja, T.

doi:10.1016/j.nima.2019.162547

Cited by 11 publications

(10 citation statements)

References 24 publications

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“…The results are presented in Refs. [21,29,48]. An illustrative example of such a TCT scan is shown in Figure 8.…”

Section: Detector Characterization and Selected Resultsmentioning

confidence: 99%

“…These detector designs have been published in many conference presentations, and pictures of the entire completed detector wafers in online compilations can be found, for example, in Refs. [20][21][22]. The detailed detector design, including TCAD simulations and electric field distribution calculations, is published in Ref.…”

Section: Design and Processing Of P-type Mcz-si Pixel Detectorsmentioning

confidence: 99%

See 1 more Smart Citation

Processing and Interconnections of Finely Segmented Semiconductor Pixel Detectors for Applications in Particle Physics and Photon Detection

Härkönen¹,

Ott²,

Gädda³

et al. 2021

Front. Phys.

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Radiation hardness is in the focus of the development of particle tracking and photon imaging detector installations. Semiconductor detectors, widely used in particle physics experiments, have turned into capacitive-coupled (AC-coupled) detectors from the originally developed conductively coupled (DC-coupled) detectors. This is due to the superior isolation of radiation-induced leakage current in AC-coupled detectors. However, some modern detector systems, such as the tracking detectors in the CERN LHC CMS or ATLAS experiments, are still DC-coupled. This originates from the difficulty of implementing AC coupling on very small pixel detector areas. In this report, we describe our advances in the detector processing technology. The first topic is the applications of the atomic layer deposition processing technology, which enables the very high densities of capacitance and resistance that are needed when the dimensions of the physical segmentation of pixel detectors need to be scaled down. The second topic is the flip-chip/bump-bonding interconnection technology, which is necessary in order to manufacture pixel detector modules on a large scale with a more than 99% yield of noise-free and faultless pixels and detector channels.

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“…The results are presented in Refs. [21,29,48]. An illustrative example of such a TCT scan is shown in Figure 8.…”

Section: Detector Characterization and Selected Resultsmentioning

confidence: 99%

Section: Design and Processing Of P-type Mcz-si Pixel Detectorsmentioning

confidence: 99%

Processing and Interconnections of Finely Segmented Semiconductor Pixel Detectors for Applications in Particle Physics and Photon Detection

Härkönen¹,

Ott²,

Gädda³

et al. 2021

Front. Phys.

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“…Detailed information behind the processing of the MOS devices and detectors has been provided in articles- Ott et al (2020); Gädda et al (2021); Härkönen et al (2021); Ott et al (2021). Each of the abovementioned samples have either Al 2 O 3 or Al 2 O 3 + HfO 2 to permit better capacitive coupling.…”

Section: Measured Device Specificationsmentioning

confidence: 99%

Characterization of Heavily Irradiated Dielectrics for Pixel Sensors Coupling Insulator Applications

et al. 2022

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An increase in the radiation levels during the high-luminosity operation of the Large Hadron Collider calls for the development of silicon-based pixel detectors that are used for particle tracking and vertex reconstruction. Unlike the conventionally used conductively coupled (DC-coupled) detectors that are prone to an increment in leakage currents due to radiation, capacitively coupled (AC-coupled) detectors are anticipated to be in operation in future collider experiments suitable for tracking purposes. The implementation of AC-coupling to micro-scale pixel sensor areas enables one to provide an enhanced isolation of radiation-induced leakage currents. The motivation of this study is the development of new generation capacitively coupled (AC-coupled) pixel sensors with coupling insulators having good dielectric strength and radiation hardness simultaneously. The AC-coupling insulator thin films were aluminum oxide (Al2O3) and hafnium oxide (HfO2) grown by the atomic layer deposition (ALD) method. A comparison study was performed based on the dielectric material used in MOS, MOSFET, and AC-coupled pixel prototypes processed on high resistivity p-type Magnetic Czochralski silicon (MCz-Si) substrates. Post-irradiation studies with 10 MeV protons up to a fluence of 1015 protons/cm2 suggest HfO2 to be a better candidate as it provides higher sensitivity with negative charge accumulation on irradiation. Furthermore, even though the nature of the dielectric does not affect the electric field within the AC-coupled pixel sensor, samples with HfO2 are comparatively less susceptible to undergo an early breakdown due to irradiation. Edge-transient current technique (e-TCT) measurements show a prominent double-junction effect as expected in heavily irradiated p-type detectors, in accordance with the simulation studies.

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“…To ensure electrical insulation, the addition of an implant between the pixels (known as p-spray or p-stop) compensating for the positive oxide charge has been established [11,12]. As an alternative to these insulating implants, the use of negative-charge dielectrics, such as aluminium oxide, has been proposed [13,14].…”

Section: Planar Pixel Sensorsmentioning

confidence: 99%

Radiation-tolerant Silicon Detectors for the LHC Phase-II Upgrade and Beyond: Review of RD50 Activities

Ott¹

2020

Proceedings of the 28th International Workshop on Vertex Detectors — PoS(Vertex2019)

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Processing of AC-coupled n-in-p pixel detectors on MCz silicon using atomic layer deposited aluminium oxide

Cited by 11 publications

References 24 publications

Processing and Interconnections of Finely Segmented Semiconductor Pixel Detectors for Applications in Particle Physics and Photon Detection

Processing and Interconnections of Finely Segmented Semiconductor Pixel Detectors for Applications in Particle Physics and Photon Detection

Characterization of Heavily Irradiated Dielectrics for Pixel Sensors Coupling Insulator Applications

Radiation-tolerant Silicon Detectors for the LHC Phase-II Upgrade and Beyond: Review of RD50 Activities

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