Processing of biomorphic Si3N4 ceramics by CVI-R technique with SiCl4/H2/N2 system

Ghanem, Hanadi; Popovska, N.; Gerhard, Helmut

doi:10.1016/j.jeurceramsoc.2006.06.008

Cited by 19 publications

(7 citation statements)

References 19 publications

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“…(4) [6]. On the other hand, via CVI-IV route silicon coated carbon template (Si/C b ) was obtained using SiCl 4 in excess of hydrogen (a = H 2 /SiCl 4 = 17) at 900 8C with SiCl 4 molar fraction of 0.065 (Eq.…”

Section: Biomorphic Sic-si 3 N 4 Composite Ceramicsmentioning

confidence: 99%

“…Recently, we have published several articles describing the processing of biomorphic ceramics such as SiC, Si 3 N 4 and SiCSi 3 N 4 by chemical vapor infiltration and reaction technique (CVI-R) using paper preforms as template [5][6][7]. SiC with different microstructure like amorphous and crystalline in addition to SiC-Si 3 N 4 composites with different composition were obtained.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Oxidation behavior of silicon carbide based biomorphic ceramics prepared by chemical vapor infiltration and reaction technique

Ghanem¹,

Alkhateeb²,

Gerhard³

et al. 2009

Ceramics International

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Section: Biomorphic Sic-si 3 N 4 Composite Ceramicsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Oxidation behavior of silicon carbide based biomorphic ceramics prepared by chemical vapor infiltration and reaction technique

Ghanem¹,

Alkhateeb²,

Gerhard³

et al. 2009

Ceramics International

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“…5,6 The diffusion rate of nitrogen in silicon is independent of object thickness and is constant when nitrogen reflection is not considered. 7 The reaction of silicon and nitrogen produces two crystalline phases: α-Si 3 N 4 , formed under the solid-phase and gas-phase reactions; 8,9 β-Si 3 N 4 , formed under the liquid-phase reaction. 10,11 In 1999, c-Si 3 N 4 with a cubic spinel structure was synthesized for the first time at a pressure above 15 GPa and temperature over 2000 K. 12 At elevated temperatures, α-Si 3 N 4 can transform into β-Si 3 N 4 , thereby, increasing the strength of sintered Si 3 N 4 ceramics.…”

Section: Introductionmentioning

confidence: 99%

Kinetics of Silicon Nitridation and the Formation Mechanism of α/β-Si₃N₄ at Atmospheric Pressure and 1410 °C

Zheng

Sergeev

et al. 2022

Ind. Eng. Chem. Res.

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The formation of α/β-Si3N4 relates to the reaction process in the direct nitridation method, which can produce cheap ultrafine Si3N4 powder on a large scale in a fluidized bed. Complete nitridation of silicon powder was conducted in a 1 atm nitrogen atmosphere at 1410 °C, which is slightly lower than the silicon melting point of 1414 °C. Comprehensive analyses with thermogravimetric analysis, X-ray diffraction, and scanning electron microscopy show several-stage nitridation kinetics of silicon powder. Compared with previous research projects, more reaction details can be observed. The reaction undergoes evaporation and multiple melting–freezing processes, causing the deviation of the actual reaction curve from the theoretical logarithm curve in a solid–gas reaction. According to heat flow curves and their derivative to time curves, the reaction can be divided into 4 main stages. The repeated melting–freezing phenomenon and the produced α/β-Si3N4 phase were investigated. The increase of particle size increases the liquid–gas and liquid–solid–gas reaction time which causes β-Si3N4 to increase rapidly.

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“…prepared Si 3 N 4 /BN nanocomposite with high fracture strength and good machinability by hot pressing in situ ‐synthesized mixed powders. Although dense Si 3 N 4 /BN ceramics are desired in most applications, porous ceramics have more advantages in some special field, just as for antenna windows and support of noble metal catalysts 8–11 …”

Section: Introductionmentioning

confidence: 99%

Properties of Porous Si₃N₄/BN Composites Fabricated by RBSN Technique

Liu

Yuan

Zhang

et al. 2010

Int J Applied Ceramic Tech

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Reaction bonding of silicon nitride (RBSN) technique combined with slip-casting shaping process was used to fabricate porous Si 3 N 4 /BN ceramic composites. Si/BN slurry with chemical stability, good dispersibility, and viscosity was prepared using glycerol trioleate (GTO) covering on Si surface and poly(acrylic acid) (PAA) as dispersant. The hydrolysis of Si was strongly prevented by GTO coating. The dispersibility of covered Si and BN suspensions were improved by PAA dispersant. Twenty volume percent Int.covered Si/BN slurries with low viscosity were successfully casted. The cast bodies were dried at room temperature, debindered at 7501C and nitrided below 14501C. The nitrided samples mainly consist of a-Si 3 N 4 , b-Si 3 N 4 , and h-BN. The composites exhibit homogeneous microstructure consisting of faceted particles, a-Si 3 N 4 nanowires and a large amount of pores. The porosity is 52.64% and the pore size is in the range of 60-300 nm. The composites show compressive strength of 16.671.5 MPa. The dielectric constant of the composite is about 3.1 and the dielectric loss is below 0.5% under different frequencies.GTO, glycerol trioleate; PAA, poly(acrylic acid).

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Processing of biomorphic Si3N4 ceramics by CVI-R technique with SiCl4/H2/N2 system

Cited by 19 publications

References 19 publications

Oxidation behavior of silicon carbide based biomorphic ceramics prepared by chemical vapor infiltration and reaction technique

Oxidation behavior of silicon carbide based biomorphic ceramics prepared by chemical vapor infiltration and reaction technique

Kinetics of Silicon Nitridation and the Formation Mechanism of α/β-Si₃N₄ at Atmospheric Pressure and 1410 °C

Properties of Porous Si₃N₄/BN Composites Fabricated by RBSN Technique

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Processing of biomorphic Si3N4 ceramics by CVI-R technique with SiCl4/H2/N2 system

Cited by 19 publications

References 19 publications

Oxidation behavior of silicon carbide based biomorphic ceramics prepared by chemical vapor infiltration and reaction technique

Oxidation behavior of silicon carbide based biomorphic ceramics prepared by chemical vapor infiltration and reaction technique

Kinetics of Silicon Nitridation and the Formation Mechanism of α/β-Si3N4 at Atmospheric Pressure and 1410 °C

Properties of Porous Si3N4/BN Composites Fabricated by RBSN Technique

Contact Info

Product

Resources

About

Kinetics of Silicon Nitridation and the Formation Mechanism of α/β-Si₃N₄ at Atmospheric Pressure and 1410 °C

Properties of Porous Si₃N₄/BN Composites Fabricated by RBSN Technique