TENCON 2015 - 2015 IEEE Region 10 Conference 2015
DOI: 10.1109/tencon.2015.7372781
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Processing of integrated gas sensor devices

Abstract: The integration of gas sensor components into wearable electronics will provide individuals the ability to detect harmful chemicals and pollutants in the environment. The key to this integration is the development of processing techniques for the fabrication of sensor components which can be incorporated into the conventional CMOS fabrication sequence. This includes the etching required for the formation of a suspended membrane on top of which the microheater and sensing layer are placed and the deposition of … Show more

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Cited by 4 publications
(16 citation statements)
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“…In [84] we have performed a thorough analysis of the effects of fabrication of a tyical suspended membrane sensor with an active area of 100 μm×100 μm using both wet chemical etching with potassium hydroxide (KOH) and dry etching in sulfur hexafluoride (SF6) plasma. For a deeper understanding of the models used in the simulations, refer to [85] for KOH etching and [86,87] for SF6 plasma etching.…”
Section: Modeling the Smo Sensor Structurementioning
confidence: 99%
See 1 more Smart Citation
“…In [84] we have performed a thorough analysis of the effects of fabrication of a tyical suspended membrane sensor with an active area of 100 μm×100 μm using both wet chemical etching with potassium hydroxide (KOH) and dry etching in sulfur hexafluoride (SF6) plasma. For a deeper understanding of the models used in the simulations, refer to [85] for KOH etching and [86,87] for SF6 plasma etching.…”
Section: Modeling the Smo Sensor Structurementioning
confidence: 99%
“…In a follow-up analysis of the two structures, it was discovered that the lateral etching noted in the plasma-etched structure shows no adverse effects on the stress distribution in the active region of the sensor [84]. The stress after deposition is a combination of all the intrinsic and thermal stresses in the individual layers which together make up the membrane.…”
Section: Modeling the Smo Sensor Structurementioning
confidence: 99%
“…The alternative low-cost option is the use of selective plasma etch processes, such as SF 6 -based plasma chemistries, often used for silicon and silicon dioxide etching. 68,72 Although plasma etching is cheap and fully CMOS compatible, it is very difficult to avoid the lateral etching which takes place during this process. This is primarily because lateral etching is desired in one direction, in order to release the membrane, but not in the other, as it increases the size of the resulting air pocket.…”
Section: Semiconductor Metal Oxide Sensorsmentioning
confidence: 99%
“…In follow-up analysis, it was found that the lateral etching had no adverse effects on the stress distribution in the active sensor region. 72,88 The modeled post-processing stress is a combination of the residual stresses in the layers which make up the entire membrane. The control of the residual stress in multilayered structures is crucial for its stability.…”
Section: Smo Sensor Fabrication Techniques-mentioning
confidence: 99%
“…This methodology has an expansive parameter space that can be utilized to tune surface chemistry with a greater degree of control than is sometimes possible with alternative wet chemical processes. 37,38 Despite Our initial studies of plasma surface modification of SnO 2 sensor materials employed Ar/O 2 and H 2 O (v) plasmas. 1 The first of these was chosen for direct comparison to the literature; moreover, Ar/O 2 plasmas etch SnO 2 to create surface oxygen vacancies, thereby enhancing gas-surface interactions while maintaining the bulk SnO 2 structure.…”
Section: ■ Introductionmentioning
confidence: 99%