Processing of W/Si and Si/W bilayers and multilayers with single and multiple excimer-laser pulses

D’Anna, E.; Luby, Š.; Luches, A.; Majková, E.; Martino, M.

doi:10.1007/bf00332576

Cited by 16 publications

(2 citation statements)

References 33 publications

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“…Heat capacity C p , density ρ, heat conductivity κ and optical absorption coefficient α are temperature dependent 3,26,27 ; their values will vary during the laser pulse,…”

Section: Laser Silicon Interaction At the Low Ablation Intensity Regimementioning

confidence: 99%

Nanosecond laser silicon micromachining

et al. 2004

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We present theoretical calculations and experimental measurements of silicon micromachining rates, efficiency of laser pulse utilization, and morphology changes under UV nanosecond pulses with intensities ranging from 0.5 GW/cm 2 to 150 GW/cm 2 . Three distinct irradiance regimes are identified based on laser intensity. At low intensity, proper gas dynamics and ablation vapor plume kinetics are taken into account in our theoretical modeling. At medium high intensity, we incorporate the proper plasma dynamics, and predict the effects of the laser generated vapor plasma and the electron hole plasma on the laser-matter interaction. At even higher intensity, we attribute the observed increased ablation rate to energy re-radiation from the laser heated hot plasma, the strong shock wave, and the accompanied strong shock wave heating effects. Experimentally measured data in these regimes agree well with our calculations, without changing parameters in the calculations used for the three regimes. Our results can be applied toward quantitatively characterize the behavior of ablation results under different laser parameters to achieve optimal results for micromachining of slots and vias on silicon wafers.

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“…Heat capacity C p , density ρ, heat conductivity κ and optical absorption coefficient α are temperature dependent 3,26,27 ; their values will vary during the laser pulse,…”

Section: Laser Silicon Interaction At the Low Ablation Intensity Regimementioning

confidence: 99%

Nanosecond laser silicon micromachining

et al. 2004

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“…Pulsed laser systems can generate temperature jumps in solids well in excess of 1000K [11][12][13] . Previous studies integrating pulsed laser excitation with small angle x-ray scattering techniques have provided direct evidence of optically driven atomic diffusion solid state systems 14,15 . However, small angle x-ray scattering is only representative of the modulation in the composition profile of a multilayer film, and is not very sensitive to the molecular composition of the newly formed phase.…”

mentioning

confidence: 99%

X-ray diffraction study of laser-driven solid-state diffusional mixing and new phase formation in Ni-Pt multilayers

et al. 2017

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Pulsed Excimer Laser Crystallization of Evaporated Amorphous Silicon Films. The Role of SiO2 Underlayer Thickness

Luby

Jergel

Majková

et al. 1996

Phys. Stat. Sol. (a)

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Amorphous Si (a-Si) films deposited by vacuum evaporation onto oxidized Si substrates with different thicknesses of SiOz underlayer were melted and crystallized using a XeCl laser beam. The energy densities of the beam E = 150 to 450 mJ/cm2 were chosen according to the results of calculations of the temperature evolution within the samples. A-Si films were irradiated by n, = 1, 10, or 100 laser pulses. The samples were analyzed by X-ray diffraction (XRD), grazing incidence XRD (GI XRD), transmission and scanning electron microscopy. The influence of the underlying SiOz thickness on the crystallization was studied. It was shown that the complete or near-complete melting of a-Si and higher temperature gradients in the melted Si (depending on the SiOz thickness) are favourable conditions for Si crystallization. Overmelting into the oxide resulted in a lower quality of Si film crystallinity.

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Processing of W/Si and Si/W bilayers and multilayers with single and multiple excimer-laser pulses

Cited by 16 publications

References 33 publications

Nanosecond laser silicon micromachining

Nanosecond laser silicon micromachining

X-ray diffraction study of laser-driven solid-state diffusional mixing and new phase formation in Ni-Pt multilayers

Pulsed Excimer Laser Crystallization of Evaporated Amorphous Silicon Films. The Role of SiO2 Underlayer Thickness

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