1994
DOI: 10.1063/1.112503
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Production and characterization of smooth, hydrogen-terminated diamond C(100)

Abstract: We report the production of smooth and well-ordered C(100) surfaces by exposure to a pure hydrogen plasma. A two domain 2×1 surface reconstruction is observed by low energy electron diffraction with half-order spots visible using incident electrons with energies as low as 13 eV. High-resolution electron energy loss spectroscopy reveals a large enhancement in specular reflectivity of low energy electrons following plasma treatment. The hydrogenated surface is stable in air and free of adsorbed hydrocarbons upon… Show more

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Cited by 122 publications
(73 citation statements)
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“…Acid treatments: Hydrogen plasma treatment (Thoms et al 1994;Strother et al 2002;Knickerbocker et al 2003) -Nitric and sulphuric acid (Kong et al 2005a;Huang and Chang 2004;Liu et al 2008;Chao et al 2007;Ushizawa et al 2002) Annealing in hydrogen gas (Härtl et al 2004;Christiaens et al 2006;Saini et al 2008) -Nitric acid Huang et al 2008;Sushchev et al 2008;Mitev et al 2007) Water vapour treatment (Ando et al 1996a) -Hydrochloric acid (Kossovsky et al 1995;Mitev et al 2007) Borane (BH3) (Krüger et al 2006;Neugart et al 2007;Liang et al 2009;Zhang et al 2009b) -Perchloric acid (Xu et al 2005) -Potassium dichromate and sulphuric acid (Mitev et al 2007) -Sulfuric acid and potassium permanganate (Xu et al 2005) Annealing in:…”
Section: Oxidation/carboxylation Reductionmentioning
confidence: 99%
“…Acid treatments: Hydrogen plasma treatment (Thoms et al 1994;Strother et al 2002;Knickerbocker et al 2003) -Nitric and sulphuric acid (Kong et al 2005a;Huang and Chang 2004;Liu et al 2008;Chao et al 2007;Ushizawa et al 2002) Annealing in hydrogen gas (Härtl et al 2004;Christiaens et al 2006;Saini et al 2008) -Nitric acid Huang et al 2008;Sushchev et al 2008;Mitev et al 2007) Water vapour treatment (Ando et al 1996a) -Hydrochloric acid (Kossovsky et al 1995;Mitev et al 2007) Borane (BH3) (Krüger et al 2006;Neugart et al 2007;Liang et al 2009;Zhang et al 2009b) -Perchloric acid (Xu et al 2005) -Potassium dichromate and sulphuric acid (Mitev et al 2007) -Sulfuric acid and potassium permanganate (Xu et al 2005) Annealing in:…”
Section: Oxidation/carboxylation Reductionmentioning
confidence: 99%
“…Therefore, prior to FvL measurements, the diamond sample is cleaned in an acid bath and H-terminated in a H 2 plasma. 14,15 This procedure produces a chemically inert, C-H bonded surface with a water contact angle of 85°-87°. Figure 6͑a͒ shows a 500ϫ 500 nm 2 AFM topograph of the diamond C͑111͒-H surface.…”
Section: Compensation For In-plane Tip-sample Displacementmentioning
confidence: 99%
“…13 Hydrogen plasma etching makes it possible to obtain atomic flatness on the (100) crystal faces of chemical vapor-deposited (CVD) polycrystalline diamond films. 14 Atomically flat surfaces were observed after the hydrogen plasma etching of homoepitaxial CVD diamond films.…”
Section: Introductionmentioning
confidence: 99%
“…32 A fully hydrogenated C(100)-(2×1):H surface corresponds to a structure in which each of the symmetric surface dimer atoms binds with a single hydrogen atom. 13,33 In this paper, the authors use quantum chemistry methods to investigate the chemical interaction of hydrogen, oxygen, methylene and carbon monoxide with point defects on the reconstructed hydrogenated diamond surface C(100)-(2×1): a single vacancy, a divacancy and an adatom. The selected types of point defects are analogues of the larger-scale surface irregularities -valleys and peaks -interacting with an active gas environment.…”
Section: Introductionmentioning
confidence: 99%