Production of a uniform VHF H2 plasma by a narrow-gap discharge

Lien, Cheng-Yang; Chen, Chia–Fu; Yang, Ching-Lung; Kawai, Yoshinobu; Chiu, Kuo-Feng; Shi, Jen–Bin; Wang, Jui-Hao; Lien, Shui−Yang; Tsai, Yu-Jer; Lien, Ting-Kuei

doi:10.1016/j.vacuum.2015.02.037

Cited by 2 publications

(1 citation statement)

References 16 publications

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“…In the present experiment, the maximum was approximately 50 Pa, which was confirmed by measuring the ion saturation current. 20) Thus, the result shown in Fig. 3 can be understood by the electron trapping effect.…”

Section: Resultsmentioning

confidence: 86%

Axial distribution of a VHF H₂ plasma produced by a narrow gap discharge

Chen

Lien

et al. 2015

Jpn. J. Appl. Phys.

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A capacitively coupled VHF H2 plasma was produced with a conventional parallel plate electrode of 400 × 300 mm2. Axial distributions of the plasma parameters were examined using a movable Langmuir probe. The electron density had a hill-like profile near the center while the electron temperature around the discharge electrode was higher than that near the center. It was found that the axial distribution of the plasma potential was considerably different from that based on ohmic heating. The measured sheath potentials around the discharge electrode were lower than the theoretical potentials. A simulation using a hybrid model was performed and compared the results with the experimental results.

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Section: Resultsmentioning

confidence: 86%

Axial distribution of a VHF H₂ plasma produced by a narrow gap discharge

Chen

Lien

et al. 2015

Jpn. J. Appl. Phys.

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Two dimensional simulations of triode VHF SiH₄plasma

Chen

Uchino³

et al. 2018

Jpn. J. Appl. Phys.

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Two-dimensional simulations of a triode VHF SiH 4 plasma (60 MHz) were performed using a fluid model, where the plasma was realized using multirod electrodes. Higher-order silanes that are responsible for the quality of amorphous silicon were included in the simulations. A typical VHF plasma with an electron density higher than 10 16 m %3 and an electron temperature lower than 3 eV was predicted between discharge electrodes while the electron density near the substrate was very low. The SiH 3 density was fairly uniform between discharge electrodes and did not decrease rapidly near the substrate, suggesting a high-speed deposition. Higher-order molecules and radicals that play an important role in dust formation had similar spatial profiles and their densities were five to 6 orders of magnitude lower than the SiH 3 density. We discussed the effect of the rate constant of reaction, SiH 3 + SiH 3 G SiH 2 + SiH 4 , on the SiH 3 density.

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Production of a uniform VHF H2 plasma by a narrow-gap discharge

Cited by 2 publications

References 16 publications

Axial distribution of a VHF H₂ plasma produced by a narrow gap discharge

Axial distribution of a VHF H₂ plasma produced by a narrow gap discharge

Two dimensional simulations of triode VHF SiH₄plasma

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Production of a uniform VHF H2 plasma by a narrow-gap discharge

Cited by 2 publications

References 16 publications

Axial distribution of a VHF H2 plasma produced by a narrow gap discharge

Axial distribution of a VHF H2 plasma produced by a narrow gap discharge

Two dimensional simulations of triode VHF SiH4plasma

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Product

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Axial distribution of a VHF H₂ plasma produced by a narrow gap discharge

Axial distribution of a VHF H₂ plasma produced by a narrow gap discharge

Two dimensional simulations of triode VHF SiH₄plasma