2019
DOI: 10.1007/s10717-019-00094-6
|View full text |Cite
|
Sign up to set email alerts
|

Production of Ceramic Materials Based on SiC with Low-Melting Oxide Additives

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
2
0
1

Year Published

2019
2019
2024
2024

Publication Types

Select...
8

Relationship

1
7

Authors

Journals

citations
Cited by 40 publications
(3 citation statements)
references
References 25 publications
0
2
0
1
Order By: Relevance
“…The primary component of the matrix is alumina, which is known as an excellent dielectric [216, 217], but some researchers consider it an n-type semiconductor with a permittivity of 9.5–10.0 and an electric strength of 10 kV/mm [218]. The melting point of aluminium oxide is 2044 °C, whereas the boiling point is 2977 °C [219, 220, 221, 222]. Note that the boiling point of any alloy depends on its components.…”
Section: Discussionmentioning
confidence: 99%
“…The primary component of the matrix is alumina, which is known as an excellent dielectric [216, 217], but some researchers consider it an n-type semiconductor with a permittivity of 9.5–10.0 and an electric strength of 10 kV/mm [218]. The melting point of aluminium oxide is 2044 °C, whereas the boiling point is 2977 °C [219, 220, 221, 222]. Note that the boiling point of any alloy depends on its components.…”
Section: Discussionmentioning
confidence: 99%
“…Nonetheless, this process is costly, time-consuming, and frequently results in the final material containing a considerable proportion of enclosed pores [13][14][15]. One of the most technologically straightforward methods for manufacturing silicon carbide ceramics involves liquid-phase sintering using specific additives [16]. This process or siliconization with molten silicon employs porous workpieces pre-formed from primary silicon carbide powders, a blend of carbon powders, or their combinations [17][18][19][20][21][22].…”
Section: Introductionmentioning
confidence: 99%
“…Сложный карбид титана-кремния (Ti 3 SiC 2 ) -одна из наиболее распространенных МАХ-фаз [2][3][4][5][6][7]. Этот материал является легким (плотность 4,52 г/см 3 ) и относительно мягким (HV 4 ГПa), имеет высокие температуру плавления (3200 °С) и модуль упругости (322 ГПа) и может составлять конкуренцию стандартным реакционноспеченной и жидкофазно-спеченной керамике на основе B 4 C и SiC [8][9][10][11][12][13][14] в качестве конструкционного материала. Плотные материалы состава Ti 3 SiC 2 можно синтезировать разными способами: химическим осаждением из газовой фазы (CVD) [15], самораспространяющимся высокотемпературным синтезом (SHS) [16], горячим прессованием (HP) [17].…”
unclassified