Production of Intense Proton Beams in Pinched-Electron-Beam Diodes

Abstract

PHYSICAL REVIEW LETTERS 6 DECEMBER 1976 eration in He and Ne to extend the range of coherent wavelengths to 53.2 nm. Conversion is in the range of 10" 5 to 10" 6 with further optimization believed to be possible. This work represents the first application of frequency upconversion to the extreme ultraviolet with use of optical nonlinarities of higher order than third, and indicates the feasibility of using such processes to extend the range of available coherent wavelengths ever closer to the soft x-ray range. The authors would like to thank T. N. Lee for advice and assistance with VUV photography, W. Hunter for advice on VUV equipment, M. Fink for preparation of the Al filters, and E. Tiedemann for laboratory assistance.

Ion diode performance on a positive polarity inductive voltage adder with layered magnetically insulated transmission line flow

“…If it is assumed that the full flow current contributes to the diode current, the load voltage can be determined from V D ¼ Z D I a along with the expression for the ion PBD impedance Z D given by [17][18][19] …”

“…1(b) and results when electrons emitted from the cathode of the successive adder cavities are born at increasing potential with respect to their common anode as one moves from upstream (generator end) to downstream (load end). Additionally, coupling power to an ion pinchedbeam diode (PBD) [17][18][19] from a MITL is not well understood and high-impedance ion PBDs are not commonplace. The work presented here investigates ion PBD performance on an IVA accelerator run in positive-polarity with layered MITL flow.…”

Intense ion beams

“…9). Необходимо отметить, что в эксперимен-тах, где вместо сплошного анода использовался тонкий, прозрачный для электронов 78 , полу-ченные величины ионных токов значительно превосходили рассчитанные по формуле (3.2). Это обусловлено уменьшением потерь электрон-ного пучка на больших радиусах в тонком аноде и результирующим увеличением £плот-ности пространственного заряда электронов в пинче.…”

High-voltage, high-impedance ion beam production

“…Most of this work, however, involved operation below 5 Ohms. The ion efficiency (fraction of the total current) in a pinched-beam diode scales inversely with the diode impedance [6], so that a reduced ion efficiency will be expected at the 10-12-Ohm diode impedance in this current work. Higher-impedance pinched-beam ion-diode operation was studied in the past [7], where ~20% ion efficiency was obtained.…”