Abstract:Deposition for the first time of titanium oxide, cerium oxide, and tin oxide thin films by reactive pulsed arc molecular beam deposition is reported. To produce these thin films, oxygen gas was pulsed between a pair of electrodes situated within a vacuum chamber. A 20 μf storage capacitor was discharged between the electrode pair during the gas pulse. A substrate was placed inline with the oxygen pulse, on which an oxide coating of the electrode material was then coated. The films were analyzed by both scannin… Show more
“…The design and theory of the PAMBD process employed in this work have been described in detail elsewhere; therefore, only a brief description of the PAMBD operating mechanism will be given here. A schematic drawing of the PAMBD source is shown in Figure . , 1 Schematic drawing of PAMBD source.…”
Section: Experimental Methodsmentioning
confidence: 99%
“…A schematic drawing of the PAMBD source is shown in Figure 1. 23,24 The ZnO thin film starting materials are a reactive gas, O 2 , and a pair of conducting high-purity Zn electrodes. In the PAMBD process prior to triggering the discharge, the gas is pulsed between the ends of a pair of cylindrical electrodes.…”
Section: Experimental Methodsmentioning
confidence: 99%
“…The laser is an expensive and sophisticated component of this system. To replace the laser with a simpler ablation source, we developed the pulsed arc-based deposition (PAMBD) technology …”
Section: Introductionmentioning
confidence: 99%
“…To replace the laser with a simpler ablation source, we developed the pulsed arc-based deposition (PAMBD) technology. 23 This technique uses a high-voltage electrical arc discharge to provide the high-energy source for material ablation and plasma generation with microsecond duration. 23 The principle of the PAMBD apparatus is based upon the pulsed arc cluster ion source developed by Siekmann et al, which is a technique that combines a pulsed high-current arc source and a molecular beam expansion.…”
Section: Introductionmentioning
confidence: 99%
“…23 This technique uses a high-voltage electrical arc discharge to provide the high-energy source for material ablation and plasma generation with microsecond duration. 23 The principle of the PAMBD apparatus is based upon the pulsed arc cluster ion source developed by Siekmann et al, which is a technique that combines a pulsed high-current arc source and a molecular beam expansion. 24 They developed this technique as a metal ion source for their mass spectrometric research of metal cluster ions.…”
The structures and properties of ZnO thin films deposited on Si (111), Corning 2947 glass and polyimide substrates by pulsed arc molecular beam deposition (PAMBD) have been studied. PAMBD is an ablation technique that utilizes a high-voltage pulsed electrical arc discharge to provide a plasma source for oxide generation and subsequent material deposition. Metal oxide generation is accomplished by pulsing oxygen gas and using the arc discharge to create a high-temperature plasma. The resulting metal oxide product is expanded and deposited onto a room-temperature substrate situated within a vacuum chamber. In this work, ZnO thin films were grown by the PAMBD method and then characterized by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), X-ray diffraction, and ellipsometry measurements to determine the film composition, structure, growth rate, and optical properties. SEM studies of ZnO films on different substrates all demonstrated that the PAMBD ZnO films were dense and have columnar structures. XPS revealed a highly stoichiometrical Zn and O (1:1) film composition representing chemically pure films. By observing ZnO thin films deposited on various substrates, we readily see the advantages of low-temperature thin film deposition due to the rapid cooling of the metal oxide product by the molecular beam supersonic expansion. This indicates that the PAMBD process is especially suitable for deposition of these materials upon temperaturesensitive substrates.
“…The design and theory of the PAMBD process employed in this work have been described in detail elsewhere; therefore, only a brief description of the PAMBD operating mechanism will be given here. A schematic drawing of the PAMBD source is shown in Figure . , 1 Schematic drawing of PAMBD source.…”
Section: Experimental Methodsmentioning
confidence: 99%
“…A schematic drawing of the PAMBD source is shown in Figure 1. 23,24 The ZnO thin film starting materials are a reactive gas, O 2 , and a pair of conducting high-purity Zn electrodes. In the PAMBD process prior to triggering the discharge, the gas is pulsed between the ends of a pair of cylindrical electrodes.…”
Section: Experimental Methodsmentioning
confidence: 99%
“…The laser is an expensive and sophisticated component of this system. To replace the laser with a simpler ablation source, we developed the pulsed arc-based deposition (PAMBD) technology …”
Section: Introductionmentioning
confidence: 99%
“…To replace the laser with a simpler ablation source, we developed the pulsed arc-based deposition (PAMBD) technology. 23 This technique uses a high-voltage electrical arc discharge to provide the high-energy source for material ablation and plasma generation with microsecond duration. 23 The principle of the PAMBD apparatus is based upon the pulsed arc cluster ion source developed by Siekmann et al, which is a technique that combines a pulsed high-current arc source and a molecular beam expansion.…”
Section: Introductionmentioning
confidence: 99%
“…23 This technique uses a high-voltage electrical arc discharge to provide the high-energy source for material ablation and plasma generation with microsecond duration. 23 The principle of the PAMBD apparatus is based upon the pulsed arc cluster ion source developed by Siekmann et al, which is a technique that combines a pulsed high-current arc source and a molecular beam expansion. 24 They developed this technique as a metal ion source for their mass spectrometric research of metal cluster ions.…”
The structures and properties of ZnO thin films deposited on Si (111), Corning 2947 glass and polyimide substrates by pulsed arc molecular beam deposition (PAMBD) have been studied. PAMBD is an ablation technique that utilizes a high-voltage pulsed electrical arc discharge to provide a plasma source for oxide generation and subsequent material deposition. Metal oxide generation is accomplished by pulsing oxygen gas and using the arc discharge to create a high-temperature plasma. The resulting metal oxide product is expanded and deposited onto a room-temperature substrate situated within a vacuum chamber. In this work, ZnO thin films were grown by the PAMBD method and then characterized by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), X-ray diffraction, and ellipsometry measurements to determine the film composition, structure, growth rate, and optical properties. SEM studies of ZnO films on different substrates all demonstrated that the PAMBD ZnO films were dense and have columnar structures. XPS revealed a highly stoichiometrical Zn and O (1:1) film composition representing chemically pure films. By observing ZnO thin films deposited on various substrates, we readily see the advantages of low-temperature thin film deposition due to the rapid cooling of the metal oxide product by the molecular beam supersonic expansion. This indicates that the PAMBD process is especially suitable for deposition of these materials upon temperaturesensitive substrates.
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