Production of submicron SiC particles by d.c. thermal plasma: a systematic approach based on injection parameters

Allaire, F.; Parent, L.; Dallaire, S.

doi:10.1007/bf02402962

Cited by 17 publications

(5 citation statements)

References 8 publications

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“…But, SiC nanoparticles also exhibit properties different from the bulk material and allow the creation of composite materials with new properties. Thus, their production has been studied by different methods such as the thermal pyrolysis of organic precursors [ 3 – 5 ], or plasma synthesis by means of DC thermal [ 6 ], inductive [ 7 – 8 ] or low-pressure microwave plasmas [ 9 ].…”

Section: Introductionmentioning

confidence: 99%

Formation of SiC nanoparticles in an atmospheric microwave plasma

Vennekamp

Bauer²,

Groh³

et al. 2011

Beilstein J. Nanotechnol.

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SummaryWe describe the formation of SiC nanopowder using an atmospheric argon microwave plasma with tetramethylsilane (TMS) as precursor. The impact of several process conditions on the particle size of the product is experimentally investigated. Particles with sizes ranging from 7 nm to about 20 nm according to BET and XRD measurements are produced. The dependency of the particle size on the process parameters is evaluated statistically and explained with growth-rate equations derived from the theory of Ostwald ripening. The results show that the particle size is mainly influenced by the concentration of the precursor material in the plasma.

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Section: Introductionmentioning

confidence: 99%

Formation of SiC nanoparticles in an atmospheric microwave plasma

Vennekamp

Bauer²,

Groh³

et al. 2011

Beilstein J. Nanotechnol.

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show abstract

“…Unlike the production of silicon carbide, where the H2/C molar ratio is critical to the powder production [27], the Hz/N molar ratio does not seem to exert the same type of effect on the silicon nitride powder production, as shown in Fig. 2.…”

Section: Optimization Of the Process Parametersmentioning

confidence: 69%

“…The apparatus used is described elsewhere [27], all reagents At, NH3, H2 and SIC14 (Aldrich Chem. Co., 99% pure) were used without further purification.…”

Section: Methodsmentioning

confidence: 99%

Synthesis and characterization of silicon nitride powders produced in a d.c. thermal plasma reactor

Allaire

Dallaire

1991

J Mater Sci

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Ultra-fine silicon nitride powder was synthesized from the SiCI4-NHa-H2-Ar system using a d.c. plasma torch reactor (production rate 150-400 g h-l). The powder produced is pure white, fluffy and amorphous. The particles are spheroidal in shape with a mean diameter between 30-60 nm forming aggregates of 0.1-0.4 I.tm depending on the operationalconditions. Chemical analysis on the crude powder handled at ambient atmosphere revealed: N(-NH4CI) :37-39%, 0:3-5% and C1:2-3%. The amorphous powder can be crystallized around 1500 ~ under nitrogen to give an m-phase content in excess of 90%. Infrared spectra can be used to semi-quantitatively determine the NH4CI content of the crude powder. That proportion is between 2.5 and 4%. The influence of some process parameters e.g. (N/Si and H2/N molar ratios, internal pressure) on powder properties was also investigated. The N/Si molar ratio was found to be the most important parameter for the powder composition whereas the internal pressure plays a major role on the powder morphology.

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“…The production of SiC nanoparticles using different processes, including plasmas, has been demonstrated in previous studies [6][7][8][9][10][11][12][13][14]47]. In thermal plasmas, the synthesis route is rather understood, e.g.…”

Section: Discussionmentioning

confidence: 99%

“…Plasma-based processes have high potential in nanomaterial synthesis. SiC nanoparticles were successfully synthesized in various plasma sources, such as DC thermal arc [11], inductive RF [12] or microwave plasmas at low-pressure [13] and at atmospheric pressure [14]. In DC thermal arc plasma, SiC particles of ~100 nm diameter were synthesized by the gas phase reaction of silicon tetrachloride with methane.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of Silicon and Silicon Carbide Nanoparticles by Pulsed Electrical Discharges in Dielectric Liquids

Hamdan

Abiad

Suk

2021

Plasma Chem Plasma Process

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Silicon carbide (SiC) has been widely used in many applications, which require high mechanical endurance or high electrical resistance. It also serves as a basic material for light emitting diodes.Here, we present an in-liquid plasma method to produce SiC nanoparticles. A sustained sparkdischarge in a dielectric liquid, which is energized by a nanosecond pulsed power supply, is established for the synthesis. To provide Si and C, we employed graphite and silicon as electrodes and cyclohexane (CHX) and tetramethylsilane (TMS) as dielectric liquids. For a reasonable comparison, we tested various combinations of electrode and liquid, namely Si-to-C in CHX, Sito-Si in CHX, and C-to-C in TMS. We found that discharges in CHX produce Si particles encapsulated in C-shell and Si nanoparticles in C-matrix. Meanwhile, discharges in TMS consistently produce SiC nanoparticles with an average size of ~10 nm, regardless of the electrode material.

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Production of submicron SiC particles by d.c. thermal plasma: a systematic approach based on injection parameters

Cited by 17 publications

References 8 publications

Formation of SiC nanoparticles in an atmospheric microwave plasma

Formation of SiC nanoparticles in an atmospheric microwave plasma

Synthesis and characterization of silicon nitride powders produced in a d.c. thermal plasma reactor

Synthesis of Silicon and Silicon Carbide Nanoparticles by Pulsed Electrical Discharges in Dielectric Liquids

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