A semiconductor matrix has been developed using lithium-drifted diodes, and successfully applied t o two-dimensional radiation localization. It is based on the constructiop of an array of individual detection regions upon a single silicon diode by orthogonal partitioning of the p and n regions. I n the matrix formation, parallel grooves, 0.5 mm wide, were cut into both the p and n faces of a silicon diode, penetrating the intrinsic region. The measured resistance achieved across all grooves is a t least loB ohms, as a result of chemical etching and surface treatment. The isolation of the electrode regions bounded by the grooves on the p and n sides of the device permits row and column addressing of charge pulses from ionizing radiations. By interconnecting the rows and interconnecting the columns of a number of such units, larger areas can be monitored. A resolution of (3 x 3) mm has been achieved. Tho configuration is considered suit8ble for the construction of a gamma camera. Construction details and operational characteristics are presented.