1963
DOI: 10.1109/tns.1963.4323264
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Production of Thick Semiconductor Radiation Detectors by Lithium Drifting

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Cited by 27 publications
(3 citation statements)
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“…A 25 mm diameter, 4 mm thick cylindrical wafer of float-zone, p-type, 300 ohm cm silicon was lithium-drifted to a depth of 3 mm using the constant wattage method (Miller, Pate and Wagner 1963). Following the drift, the diode was cut into a 16 mm square.…”
Section: Manufacturementioning
confidence: 99%
“…A 25 mm diameter, 4 mm thick cylindrical wafer of float-zone, p-type, 300 ohm cm silicon was lithium-drifted to a depth of 3 mm using the constant wattage method (Miller, Pate and Wagner 1963). Following the drift, the diode was cut into a 16 mm square.…”
Section: Manufacturementioning
confidence: 99%
“…In the early days of germanium γ-ray detection, less purified material was used. The compensation method for net doping density reduction was based on the lithium drifting technique [11]. With an applied voltage bias, the drift of the interstitial Li+ ions through the detector is made possible leading to the neutralization of acceptors by the creation of Li+ acceptor pairs.…”
Section: Introductionmentioning
confidence: 99%
“…These crystals exhibit high levels of interstitial hydrogen, which may form complexes with some metallic impurities such as copper [13]. Good quality crystals (despite being small) may be fabricated in University labs [11,14] which show that nowadays the availability of such crystals is better than ever. Gamma-ray detector manufacturers usually use commercially available crystals, which are subsequently processed, or in some cases fabricate the material itself.…”
Section: Introductionmentioning
confidence: 99%