2024
DOI: 10.1039/d3ma00847a
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Profound influence of surface trap states on the utilization of charge carriers in CdS photoanodes

Elif Öykü Alagöz,
Hadi Jahangiri,
Sarp Kaya

Abstract: In CdS photoanodes, the decoration of surface sulfur vacancies by CTAB passivates the electron trapping process, resulting in improved photoelectrochemical water oxidation performance.

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Cited by 5 publications
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“…However, these materials have limitations; for example, TiO 2 works only under UV light due to its 3.0–3.2 eV band gap, 21 while metal sulphides are unstable due to photocorrosion. 22 Graphitic carbon nitride (g-C 3 N 4 ) has garnered significant attention due to its appealing characteristics, which include a moderate band gap, high thermal stability and a large surface area. 23,24 Graphitic carbon nitride photocatalysts can work efficiently under sunlight.…”
Section: Introductionmentioning
confidence: 99%
“…However, these materials have limitations; for example, TiO 2 works only under UV light due to its 3.0–3.2 eV band gap, 21 while metal sulphides are unstable due to photocorrosion. 22 Graphitic carbon nitride (g-C 3 N 4 ) has garnered significant attention due to its appealing characteristics, which include a moderate band gap, high thermal stability and a large surface area. 23,24 Graphitic carbon nitride photocatalysts can work efficiently under sunlight.…”
Section: Introductionmentioning
confidence: 99%