Prognostic Health Monitoring Method For Thermal Fatigue Failure Of Power Module Solder Joints Using The Grain Boundary Sliding Model

Uehara, Hideaki; Monda, Tomoko; Kano, Akira; Fumikura, Tomoya; Hirohata, Kenji

doi:10.23919/icep51988.2021.9451981

Cited by 1 publication

(1 citation statement)

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“…The case temperature T c can be measured by installing a specific temperature sensor at the bottom of the module, whereas the junction temperature T j needs to be measured by intruding into the module. This method can grasp the working operation of the IGBT power module without interrupting the normal operation of the IGBT module and realizing online monitoring; however, it also has obvious shortcomings; first, the measurement of the shell temperature T c requires high stability and accuracy of the temperature sensor used for measurement; second, the measurement of the junction temperature T j is invasive, and the accuracy of the measurement is also affected by the installation position of the sensor; and finally it is necessary to establish a high-precision electrical, thermal model to calculate the thermal resistance [78]. However, it is usually more difficult to establish a high-precision electrical, thermal model, which needs to consider the heat generation power loss and remove the influence of the ambient temperature.…”

Section: Internal Thermal Resistancementioning

confidence: 99%

Research Progress in Failure Mechanism and Health State Evaluation Index System of Welded IGBT Power Modules

et al. 2023

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As the performance requirements of insulated gate bipolar transistors (IGBTs) in various fields of power electronic systems are increasing, the IGBT power module package structure, aging mechanism analysis, and selection of health state characteristic parameters are of great significance to ensure the normal operation of power systems. At present, research on the aging failure of welded IGBT modules is relatively comprehensive and can be divided into chip aging failure and package aging failure according to their failure parts. However, there is some research on the relationship between aging failure and the characteristic quantity of power modules, but no definite system has been formed. Therefore, in this paper, the packaging structure of the solder-type IGBT modules and the aging mechanism caused by different aging reasons were summarized. Moreover, the health status monitoring of solder-type IGBT modules from the junction temperature, bonding line, solder layer, and package insulation aging health status monitoring and its quantitative assessment research progress was analyzed in detail. Also, the health state evaluation index system of the solder-type IGBT modules was completed on the basis of voltage, current, thermal, insulation parameters, and other characteristic quantities. Finally, based on the analysis of domestic and international research problems, the development trend and direction of the condition monitoring technology of solder-type IGBT modules is foreseen. The research on condition monitoring for welded IGBT module technology has a certain significance.

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Section: Internal Thermal Resistancementioning

confidence: 99%