Programming Characteristics of Phase Change Random Access Memory Using Phase Change Simulations

Kim, Young-Tae; Hwang, Y.N.; Lee, Keun-Ho; Lee, Se-Ho; Jeong, Changwook; Ahn, Su−Jin; Yeung, F.; Koh, G.H.; Jeong, Heong-Sik; Chung, Won-Young; Kim, Tai-Kyung; Park, Young-Kwan; Kim, Ki Nam; Kong, Jeong-Taek

doi:10.1143/jjap.44.2701

Cited by 39 publications

(11 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Two general categories of cell structures exist for implementing a sublithographic aperture. One category involves the control of this cross-section by the size of one of the electrical contacts to the phase-change material [contact minimized, Figure 1 [13,21,24], as well as the possibility for enhanced endurance. This possibility is supported by the observation that many failure and degradation mechanisms for PCRAM cells are associated with the interface between the phase-change material and one of the surrounding materials [27].…”

Section: Figurementioning

confidence: 99%

“…Because of the large number of factors that can influence the RESET current, predictive numerical simulations are important. A number of studies have used analytical equations [28][29][30][31], finite-element techniques [21,[32][33][34], and finite-difference techniques [6,35] to analyze either PCRAM cells or the phase-change material. Pirovano et al [13] studied the RESET current and the thermal proximity effect of scaled PCRAM using both simulation and experiment.…”

Section: Figurementioning

confidence: 99%

See 1 more Smart Citation

Phase-change random access memory: A scalable technology

et al. 2008

View full text Add to dashboard Cite

Nonvolatile RAM using resistance contrast in phase-change materials [or phase-change RAM (PCRAM)] is a promising technology for future storage-class memory. However, such a technology can succeed only if it can scale smaller in size, given the increasingly tiny memory cells that are projected for future technology nodes (i.e., generations). We first discuss the critical aspects that may affect the scaling of PCRAM, including materials properties, power consumption during programming and read operations, thermal cross-talk between memory cells, and failure mechanisms. We then discuss experiments that directly address the scaling properties of the phase-change materials themselves, including studies of phase transitions in both nanoparticles and ultrathin films as a function of particle size and film thickness. This work in materials directly motivated the successful creation of a series of prototype PCRAM devices, which have been fabricated and tested at phase-change material cross-sections with extremely small dimensions as low as 3 nm • 20 nm. These device measurements provide a clear demonstration of the excellent scaling potential offered by this technology, and they are also consistent with the scaling behavior predicted by extensive device simulations. Finally, we discuss issues of device integration and cell design, manufacturability, and reliability.

show abstract

Section: Figurementioning

confidence: 99%

Section: Figurementioning

confidence: 99%

Phase-change random access memory: A scalable technology

et al. 2008

View full text Add to dashboard Cite

show abstract

“…Phase change random access memory (PCRAM) is one of the highly promising next-generation memories by virtue of its nonvolatile data retention property and rapid writing and reading speeds. − However, high reset current has been a major obstacle to further scaling of PCRAM, − and it has been suggested that confining the phase change materials into a very narrow trench or hole, a so-called confined cell, could be a viable method to solve the high reset current problem. For such confined cell structures, it is necessary to deposit the Ge 2 Sb 2 Te 5 film, which is the most suited phase change material (PCM) for memory devices, using a process that offers excellent conformality in terms of its thickness as well as its chemical composition, such as atomic layer deposition (ALD).…”

Section: Introductionmentioning

confidence: 99%

Combined Ligand Exchange and Substitution Reactions in Atomic Layer Deposition of Conformal Ge₂Sb₂Te₅ Film for Phase Change Memory Application

et al. 2015

View full text Add to dashboard Cite

For phase change memories application, Ge− Sb−Te films were prepared by a stable and reliable atomic layer deposition (ALD) method. Ge(OC 2 H 5 ) 4 , Sb(OC 2 H 5 ) 3 , [(CH 3 ) 3 Si] 3 Sb, and [(CH 3 ) 3 Si] 2 Te were used to deposit various layers with compositions that can be described by combinations of GeTe 2 −Sb 2 Te layers including Ge 2 Sb 2 Te 5 at a substrate temperature as low as 70°C. A shift in composition of Sb−Te films from Sb 2 Te 3 to Sb 2 Te composition was achieved by combining ligand exchange and substitution reaction between Sb in [(CH 3 ) 3 Si] 3 Sb and Te in the Sb 2 Te 3 layer. This surface-limited ALD process allowed highly conformal, smooth, and reproducible film growth over a contact hole structure, highlighting the feasibility of phase change memory applications.

show abstract

“…A number of studies have used analytical equations [49,108,[119][120][121][122], finite-element techniques [123][124][125][126][127][128][129][130][131], and finite-difference techniques [42,132] to analyze either PCM cells or phase change material. Pirovano et al studied the RESET current and the thermal proximity effect of scaled PCM by both simulation and experiment [41].…”

Section: Modeling Of Pcm Physics and Devicesmentioning

confidence: 99%

Phase change memory technology

Burr,

Breitwisch,

Franceschini

et al. 2010

Preprint

View full text Add to dashboard Cite

We survey the current state of phase change memory (PCM), a non-volatile solid-state memory technology built around the large electrical contrast between the highly-resistive amorphous and highly-conductive crystalline states in so-called phase change materials. PCM technology has made rapid progress in a short time, having passed older technologies in terms of both sophisticated demonstrations of scaling to small device dimensions, as well as integrated large-array demonstrators with impressive retention, endurance, performance and yield characteristics.We introduce the physics behind PCM technology, assess how its characteristics match up with various potential applications across the memory-storage hierarchy, and discuss its strengths including scalability and rapid switching speed. We then address challenges for the technology, including the design of PCM cells for low RESET current, the need to control device-to-device variability, and undesirable changes in the phase change material that can be induced by the fabrication procedure. We then turn to issues related to operation of PCM devices, including retention, device-to-device thermal crosstalk, endurance, and bias-polarity effects. Several factors that can be expected to enhance PCM in the future are addressed, including Multi-Level Cell technology for PCM (which offers higher density through the use of intermediate resistance states), the role of coding, and possible routes to an ultra-high density PCM technology.

show abstract

Programming Characteristics of Phase Change Random Access Memory Using Phase Change Simulations

Cited by 39 publications

References 2 publications

Phase-change random access memory: A scalable technology

Phase-change random access memory: A scalable technology

Combined Ligand Exchange and Substitution Reactions in Atomic Layer Deposition of Conformal Ge₂Sb₂Te₅ Film for Phase Change Memory Application

Phase change memory technology

Contact Info

Product

Resources

About

Programming Characteristics of Phase Change Random Access Memory Using Phase Change Simulations

Cited by 39 publications

References 2 publications

Phase-change random access memory: A scalable technology

Phase-change random access memory: A scalable technology

Combined Ligand Exchange and Substitution Reactions in Atomic Layer Deposition of Conformal Ge2Sb2Te5 Film for Phase Change Memory Application

Phase change memory technology

Contact Info

Product

Resources

About

Combined Ligand Exchange and Substitution Reactions in Atomic Layer Deposition of Conformal Ge₂Sb₂Te₅ Film for Phase Change Memory Application