Progress in Ammonothermal Crystal Growth of Gallium Nitride from 2017–2023: Process, Defects and Devices

Stoddard, Nathan; Pimputkar, Siddha

doi:10.3390/cryst13071004

Cited by 8 publications

(16 citation statements)

References 68 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Despite issues such as low growth rates and demanding equipment requirements, the quality and size of crystals in both basic and acidic ammonia thermal growth systems have seen significant improvements. The crystal quality grown by basic mineralizers is more stable, while acidic mineralizers have a relative advantage in terms of growth rate [31] . When compared to HVPE growth technology, the ammonothermal growth technique exhibits a lower dislocation density and absence of lattice warping.…”

Section: Challenges and Prospectsmentioning

confidence: 99%

“…This paper provides a comprehensive review of research advances in liquid phase growth of gallium nitride. It is compared with previous review articles on GaN growth by the liquid phase method [30,31] . The second part describes not only the development of Na fluxes, but also summarizes GaN crystal growth using other metal fluxes such as K, Li, Ca, etc.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Research Progress in Liquid Phase Growth of GaN Crystals

Sun,

Liu,

Wang

et al. 2024

Chemistry A European J

View full text Add to dashboard Cite

As a wide band gap semiconductor, gallium nitride (GaN) has excellent structural stability and mechanical properties, giving it unique advantages in applications such as high frequency, high power, and high temperature. As a result, it has broad application prospects in optoelectronics and microelectronics. However, the lack of high‐quality, large‐size GaN crystal substrates severely limit the improvement of electronic device performance. To solve this problem, liquid phase growth of GaN has attracted much attention because it can produce higher quality GaN crystals compared to traditional vapor phase growth methods. This review introduces two main methods of liquid phase growth of GaN: the flux method and ammonothermal method, as well as their advantages and challenges. It reviews the research history and recent advances of these two methods, including the effects of different solvents and mineralizers on the growth quality and performance of GaN crystals, as well as various technical improvements. This review aims to outline the principles, characteristics, and development trends of liquid phase growth of GaN, to provide more inspiration for future research on liquid phase growth, and to achieve further breakthroughs in its development and commercial application.

show abstract

Section: Challenges and Prospectsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Research Progress in Liquid Phase Growth of GaN Crystals

Sun,

Liu,

Wang

et al. 2024

Chemistry A European J

View full text Add to dashboard Cite

show abstract

“…The growth of GaN by the ammonothermal method has been the subject of intense research for nearly three decades and is well summarized in recent reviews. 19,24,26 The typical ammonothermal process set up is illustrated in Figure 2. 27 Some of the key takeaways from the accumulated literature are that (a) linear crystal growth rates are relatively slow, with top reported values of around 100-200 µm/day for ammonobasic 28 and up to 700 µm /day for ammonoacidic growth, 29 (b) dislocation densities can be quite low, down as far as 100 defects/cm 2 , 30 (c) oxygen is the key impurity, 19 (d) simultaneous growth in different crystal planes can be destabilizing, 31 and (e) very long growth times are a significant drag on the speed of process innovation.…”

Section: Ammonothermal Nitridesmentioning

confidence: 99%

Prospective view of nitride material synthesis

Stoddard

Pimputkar

2023

Int J Ceramic Engine & Sci

Self Cite

View full text Add to dashboard Cite

The field of nitride‐based materials is producing some of the most promising and interesting candidates for advanced technology applications. Novel formulations and polymorphs are of interest for applications requiring one or more of: high hardness, high oxygen resistance at elevated temperatures, catalytic action, semiconductor light sources, and (ultra‐)wide band gap electronics. The synthesis of nitrides with excellent single crystal structural quality of an appreciable size is challenging whether working in solution growth techniques like ammonothermal and flux growth, or in vapor deposition techniques. This paper presents a perspective on recent developments in equipment and techniques for single crystal nitride synthesis with a view toward progress anticipated in the next 5–10 years.

show abstract

“…The ammonothermal (AT) method is one of the key technologies used for growing bulk GaN crystals. It uses supercritical ammonia for the dissolution of feedstock material in order to crystallize bulk GaN on native seeds due to a convection-driven transport [ 4 , 5 ]. The method enables the production of GaN substrates with various conductivity, including n -type, p -type, as well as semi-insulating (SI) material with a resistivity between 10 6 and 10 12 Ωcm.…”

Section: Introductionmentioning

confidence: 99%

Formation of Grown-In Nitrogen Vacancies and Interstitials in Highly Mg-Doped Ammonothermal GaN

Zajac,

Kaminski,

Kozlowski

et al. 2024

Materials

View full text Add to dashboard Cite

The formation of intrinsic point defects in the N-sublattice of semi-insulating Mg-doped GaN crystals grown by the ammonothermal method (SI AT GaN:Mg) was investigated for the first time. The grown-in defects produced by the displacement of nitrogen atoms were experimentally observed as deep traps revealed by the Laplace transform photoinduced transient spectroscopy in the compensated p-type crystals with the Mg concentrations of 6 × 1018 and 2 × 1019 cm−3 and resistivities of ~1011 Ωcm and ~106 Ωcm, respectively. In both kinds of materials, three closely located traps with activation energies of 430, 450, and 460 meV were revealed. The traps, whose concentrations in the stronger-doped material were found to be significantly higher, are assigned to the (3+/+) and (2+/+) transition levels of nitrogen vacancies as well as to the (2+/+) level of nitrogen split interstitials, respectively. In the material with the lower Mg concentration, a middle-gap trap with the activation energy of 1870 meV was found to be predominant. The results are confirmed and quantitatively described by temperature-dependent Hall effect measurements. The mechanism of nitrogen atom displacement due to the local strain field arising in SI AT GaN:Mg is proposed and the effect of the Mg concentration on the charge compensation is discussed.

show abstract

Progress in Ammonothermal Crystal Growth of Gallium Nitride from 2017–2023: Process, Defects and Devices

Cited by 8 publications

References 68 publications

Research Progress in Liquid Phase Growth of GaN Crystals

Research Progress in Liquid Phase Growth of GaN Crystals

Prospective view of nitride material synthesis

Formation of Grown-In Nitrogen Vacancies and Interstitials in Highly Mg-Doped Ammonothermal GaN

Contact Info

Product

Resources

About