Progress in doping semiconductor nanowires during growth

Dayeh, Shadi A.; Chen, Renjie; Ro, Yun Goo; Sim, Joonseop

doi:10.1016/j.mssp.2016.10.016

Cited by 39 publications

(37 citation statements)

References 182 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Exploitation of NWs in LEDs [5,6], solar cells [7,8], photodetectors [9], and other optoelectronic devices requires a controllable methodology for doping. Consequently, significant efforts have been put into the investigation of the NW doping process [10]. A specific feature of the VLS process is that dopants can incorporate either through the catalyst droplet * Corresponding author: teemu.hakkarainen@tuni.fi or via the vapor-solid (VS) growth on the NW sidewalls.…”

Section: Introductionmentioning

confidence: 99%

Te incorporation and activation as n -type dopant in self-catalyzed GaAs nanowires

Hakkarainen

Piton

Fiordaliso

et al. 2019

Phys. Rev. Materials

View full text Add to dashboard Cite

Dopant atoms can be incorporated into nanowires either via the vapor-liquid-solid mechanism through the catalyst droplet or by the vapor-solid growth on the sidewalls. Si is a typical n-type dopant for GaAs, but in nanowires it often suffers from a strongly amphoteric nature in the vapor-liquid-solid process. This issue can be avoided by using Te, which is a promising but less common alternative for n-type doping of GaAs nanowires. Here, we present a detailed investigation of Te-doped self-catalyzed GaAs nanowires. We use several complementary experimental techniques, such as atom probe tomography, off-axis electron holography, micro-Raman spectroscopy, and single-nanowire transport characterization, to assess the Te concentration, the free-electron concentration, and the built-in potential in Te-doped GaAs nanowires. By combing the experimental results with a theoretical model, we show that Te atoms are mainly incorporated by the vapor-liquid-solid process through the Ga droplet, which leads to both axial and radial dopant gradients due to Te diffusion inside the nanowires and competition between axial elongation and radial growth of nanowires. Furthermore, by comparing the free-electron concentration from Raman spectroscopy and the Te-atom concentrations from atom probe tomography, we show that the activation of Te donor atoms is 100% at a doping level of 4 × 10 18 cm −3 , which is a significant result in terms of future device applications.

show abstract

Section: Introductionmentioning

confidence: 99%

Te incorporation and activation as n -type dopant in self-catalyzed GaAs nanowires

Hakkarainen

Piton

Fiordaliso

et al. 2019

Phys. Rev. Materials

View full text Add to dashboard Cite

show abstract

“…We distinguish between conventionally doped NWs, which are doped by adding Si during growth, and unconventionally doped NWs, which are doped by FIB implantation prior to growth. Depending on the solubility of the dopant in the liquid phase of the droplet and in the solid phase of the NW, the dopant is incorporated into the NW during growth . This changes among other things the chemical potentials of the liquid and solid phase whereby the kinetic growth processes are influenced.…”

Section: Resultsmentioning

confidence: 99%

Self‐Organized Growth of Quantum Dots and Quantum Wires by Combination of Focused Ion Beams and Molecular Beam Epitaxy

Scholz

Schott

Schmidt

et al. 2018

Physica Status Solidi (b)

View full text Add to dashboard Cite

The combination of focused ion beam (FIB) implantation and molecular beam epitaxy (MBE) as ultrahigh-vacuum (UHV) processes allows for nm-resolution fabrication both in lateral as well as in growth direction. The authors exploit self-organized growth of Stranski-Krastanov In x Ga 1-x . As quantum dots and III-V nanowire structures, both initiated by FIB-implantation of different ion species. Samples are transferred between the FIB and the MBE by UHVtunnels or a separate UHV-suitcase which links instruments far away from each other. Since the whole process is within the UHV, no wet or dry chemistry deteriorates the solid-state interfaces which increases the purity and the reproducibility. Since the available FIB ion species are not only Gallium, but around 40 elements of the periodic table, this method is very versatile and covers even elements which are usually not introduced in a GaAs-MBE chamber due to purity reasons. Thus, beside site controlled growth any FIB doping, before, in between, due to UHV transfer and after the MBE-growth becomes possible.

show abstract

“…128,133 In other words, the dopants result more complexities in III-V nanowire growths and cause nanowires' growths less controllable. 194,195 In my PhD study, understanding the effect of dopant on nanowire growth is one major objective.…”

Section: Doping Of Iii-v Nanowiresmentioning

confidence: 99%

“…It has been reported that dopants have remarkable influence on semiconductor nanowires growth rate. In some cases, it is the dopant that changes the catalyst supersaturation, which is the driving force for axial growth; in some cases, it is the dopant or the precursor that act 195 Doping may also impact on the structural characteristics of nanowires. Furthermore, it was found that dopants could modify the interfacial energy between catalyst and nanowire.…”

Section: The Effect Of Doping On Nanowire Growthmentioning

confidence: 99%

See 1 more Smart Citation

Understanding the growth of III-V semiconductor nanowires with component addition in metal-organic chemical vapor deposition

Gao¹

View full text Add to dashboard Cite

In recent decades, extensive research has been engaged into III-V semiconductor nanowires. It has been widely recognized that they have promising applications for electronic and optoelectronic devices due to their intrinsic material and unique geometry.Currently, the controllable growth of binary III-V nanowires can be achieved via Au-catalysed vapor-liquid-solid method in both metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) system. Conventionally, the key parameters for tuning III-V nanowires' growths include the growth temperatures, precursor flow rates and the catalyst sizes. However, it has been found that the component addition, i.e. dopants and III/V incorporation, also influenced the controllable growth of III-V nanowires. Therefore, it is meaningful to understand this effect and its underlying influencing mechanism.Doping is a conventional way to introduce impurity atoms into host semiconductor to improve material properties by inducing free electrons or vacancies. The incorporation of impurity atoms can induce electrical property improvement, meanwhile may make the nanowire growth process more complex. However, the effect of doping on nanowire growth is still unclear. In this project, Sn-doped Au-catalysed GaAs nanowires were synthesized in MOCVD with a range of growth parameter including varied growth temperatures and tetraethyl-tin flow rates. The systematic characterizations on as-grown nanowires were carried out by electron microscopy. It was found that the Sn addition influenced the nanowires growth rate and structural quality in different ways at different growth temperatures.Suitable and tuneable bandgaps of ternary III-V nanowires make them suitable for electronic and optoelectronic devices, such as light emission diodes and tandem solar cells. However, elemental segregations have been a long-standing issue in the ternary nanowires, which could induce the core-shell heterostructures in the nanowires. The formation mechanism of core and shell need to be further clarified in order to control the compositional configuration in nanowires, which is meaningful for optimizing their performances in devices. In this project, InGaP nanowires were synthesized in MOCVD and their morphological, structural and compositional characteristics were investigated systematically by electron microscopy.The formation mechanism of the core-shell structure and the axial compositional gradient were discussed. Furthermore, the effect of catalyst size on the growth of hierarchical structured InGaP nanowires was demonstrated. XI

show abstract

Progress in doping semiconductor nanowires during growth

Cited by 39 publications

References 182 publications

Te incorporation and activation as n -type dopant in self-catalyzed GaAs nanowires

Te incorporation and activation as n -type dopant in self-catalyzed GaAs nanowires

Self‐Organized Growth of Quantum Dots and Quantum Wires by Combination of Focused Ion Beams and Molecular Beam Epitaxy

Understanding the growth of III-V semiconductor nanowires with component addition in metal-organic chemical vapor deposition

Contact Info

Product

Resources

About