Progress in electronic materials characterization

Holloway, Paul H.

doi:10.1116/1.1599865

Cited by 2 publications

(1 citation statement)

References 60 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[1][2][3][4] In scientific applications, surface analysis ensures that a prepared surface is sufficiently clean for an intended purpose or to verify that a material has been prepared as desired. [1][2][3][4] In scientific applications, surface analysis ensures that a prepared surface is sufficiently clean for an intended purpose or to verify that a material has been prepared as desired.…”

Section: Introductionmentioning

confidence: 99%

Growth and trends in Auger-electron spectroscopy and x-ray photoelectron spectroscopy for surface analysis

Powell

2003

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

Articles you may be interested inPractical expressions for the mean escape depth, the information depth, and the effective attenuation length in Auger-electron spectroscopy and x-ray photoelectron spectroscopy Instrumentation and analytical methods of an x-ray photoelectron spectroscopy-scanning tunneling microscopy surface analysis system for studying nanostructured materials Rev. Sci. Instrum. 77, 083901 (2006); 10.1063/1.2221539 Information depth and the mean escape depth in Auger electron spectroscopy and x-ray photoelectron spectroscopy J. Vac. Sci. Technol. A 21, 274 (2003); 10.1116/1.1538370Consistent, combined quantitative Auger electron spectroscopy and x-ray photoelectron spectroscopy digital databases: Convergence of theory and experiment SiO 2 thickness determination by x-ray photoelectron spectroscopy, Auger electron spectroscopy, secondary ion mass spectrometry, Rutherford backscattering, transmission electron microscopy, and ellipsometry J.

show abstract

Section: Introductionmentioning

confidence: 99%

Growth and trends in Auger-electron spectroscopy and x-ray photoelectron spectroscopy for surface analysis

Powell

2003

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

show abstract

Role of defects at nanoscale ZnO and Cu(In,Ga)Se2 semiconductor interfaces

Strzhemechny

2006

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

Current understanding and control of semiconductor contacts increasingly require measurements sensitive to defects and chemical changes at nanoscale interfaces. We offer examples illustrating dramatic macroscopic effects occurring in semiconductor systems as a result of nanoscale interface phenomena. In some cases, there is interplay of several competing defect-driven mechanisms. Elucidating them and finding the leading ones require careful experimental approach. For single-crystalline ZnO, we study the role of near-surface defects on the formation of Au Schottky contacts. Among the factors degrading the rectifying characteristics of such contacts one should consider the following. High concentrations of shallow donors in the surface and subsurface regions lead to barrier thinning, resulting in increased tunneling. Alternatively, the presence of deep defects near contact interface promotes tunneling by defect-assisted hopping. Nanoscale electronic and chemical studies show that independent reduction of both shallow donors and deep defects significantly improves the rectifying performance of the Au/ ZnO contacts. We find that processing of ZnO with remote O and H plasmas allows for controllable tailoring of chemical and physical properties of the surface. By the same token, nanoscale compositional and electrostatic variations between grain boundaries and grain interiors in thin polycrystalline films of Cu͑In, Ga͒Se 2 , absorber layers in record-setting solar cells, show how nanoscale arrangement of near-surface stoichiometric defects may improve the overall photovoltaic efficiency. Confirming the theory, we find a 50% reduction in Cu composition from grain interior to boundary and a p-type potential barrier that acts to reduce majority-carrier hole recombination. These examples emphasize the practical significance of nanoscale chemical and electronic features at electronic material interfaces.

show abstract

Progress in electronic materials characterization

Abstract: A compact ultrahigh-vacuum system for the in situ investigation of III/V semiconductor surfaces Rev. Sci. Instrum. 71, 504 (2000)

Cited by 2 publications

References 60 publications

Growth and trends in Auger-electron spectroscopy and x-ray photoelectron spectroscopy for surface analysis

Growth and trends in Auger-electron spectroscopy and x-ray photoelectron spectroscopy for surface analysis

Role of defects at nanoscale ZnO and Cu(In,Ga)Se2 semiconductor interfaces

Contact Info

Product

Resources

About