Progress in EUV Resist Development

Shimizu, Daisuke; Maruyama, Ken; Saitou, Akio; Kai, Toshiyuki; Shimokawa, Tsutomu; Fujiwara, Koichi; Kikuchi, Yukiko; Nishiyama, Iwao

doi:10.2494/photopolymer.20.423

Cited by 44 publications

(39 citation statements)

References 25 publications

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“…Owing to the intensive development of materials and exposure tools, the resolution of EUV lithography has reached the sub-30-nm region with 10 -20 mJ cm À2 sensitivity using chemically amplified resists. [5][6][7][8][9] For nonchemically amplified resists, the delineation of line and space patterns with 11 nm half-pitch has been reported. 10) However, the surface roughness of patterned resists, referred to as line edge roughness (LER) [or line width roughness (LWR)] is still far from the targeted value at the 22 nm node (<1 nm).…”

Section: Introductionmentioning

confidence: 99%

“…Molecular glass resists have attracted much attention because they are believed to have an advantage in terms of molecular size, leading to the reduction of LER. 8,9,[22][23][24][25] Although many excellent resists have been reported, their LER has barely reached that of high-performance polymer resists. The reduction of molecular size has not necessarily directly led to a decrease in LER.…”

Section: Introductionmentioning

confidence: 99%

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Radiation Chemistry in Chemically Amplified Resists

Kozawa

Tagawa

2010

Jpn. J. Appl. Phys.

336

319

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Historically, in the mass production of semiconductor devices, exposure tools have been repeatedly replaced with those with a shorter wavelength to meet the resolution requirements projected in the International Technology Roadmap for Semiconductors issued by the Semiconductor Industry Association. After ArF immersion lithography, extreme ultraviolet (EUV; 92.5 eV) radiation is expected to be used as an exposure tool for the mass production at or below the 22 nm technology node. If realized, 92.5 eV EUV will be the first ionizing radiation used for the mass production of semiconductor devices. In EUV lithography, chemically amplified resists, which have been the standard resists for mass production since the use of KrF lithography, will be used to meet the sensitivity requirement. Above the ionization energy of resist materials, the fundamental science of imaging, however, changes from photochemistry to radiation chemistry. In this paper, we review the radiation chemistry of materials related to chemically amplified resists. The imaging mechanisms from energy deposition to proton migration in resist materials are discussed.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Radiation Chemistry in Chemically Amplified Resists

Kozawa

Tagawa

2010

Jpn. J. Appl. Phys.

336

319

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“…Extreme ultraviolet (EUV) lithography has been the favorite candidate of successor of immersion ArF [5]. Except EUV lithography, other lithography candidates, i.e., multi patterning, nanoimprint, mask less lithography, and DSA are also investigated.…”

Section: Introductionmentioning

confidence: 99%

Self-Consistent Field Theory of Directed Self-Assembly on CH Pitch Division

Tominaga¹,

Minegishi²,

Komatsu³

et al. 2014

J. Photopol. Sci. Technol.

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“…Self Aligned Double Patterning [4] for 3x nm and 2x nm. Further size reduction requires triple or quadruple patterning, and it causes huge increase of CoO and the difficulty of overlay [5] Extreme ultraviolet (EUV) lithography has been the favorite candidate of successor of immersion ArF [6][7][8]. Except EUV lithography, other lithography candidates, i.e., multi patterning, nanoimprint, mask less lithography, and DSA are also investigated.…”

Section: Introductionmentioning

confidence: 99%

Directed Self Assembly Materials for Semiconductor Lithography

Minegishi¹,

Naruoka²,

Nagai³

2013

J. Photopol. Sci. Technol.

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The Directed Self Assembly (DSA) method is becoming a key complementary technology for enabling lithographic pattern feature shrinkage. Recent DSA technology has developed remarkable improvements in many aspects of materials and process. Block co-polymer, especially polystyrene-block-polymethylmethacrylate (PS-b-PMMA) is the standard DSA patterning material for lithography. However, the patterning limit of PS-b-PMMA is about 25nmP, and high-χ block co-polymer is necessary for sub 20nmP patterning. Not only block co-polymer, but also underlayer (neutral layer, pinning layer), top coat, and directing pattern forming photoresist are also necessary. In this paper, recent progress of directed self assembly materials and supporting materials are described.

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Progress in EUV Resist Development

Cited by 44 publications

References 25 publications

Radiation Chemistry in Chemically Amplified Resists

Radiation Chemistry in Chemically Amplified Resists

Self-Consistent Field Theory of Directed Self-Assembly on CH Pitch Division

Directed Self Assembly Materials for Semiconductor Lithography

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