“…Figure 4c presents the output characteristics of the 15-bit code generator. A bit rate close to 330 bit s −1 is obtained at a supply voltage of −20 V. The circuit performance is comparable to reported state-of-the-art integrated circuits based on bulk organic thin-films, which demonstrates a great potential for the application of the PffBT4T-2DT based PoM-FETs in radio-frequency identification transponders 20 , 65 – 67 . Fig.…”
It is still a great challenge to fabricate conjugated polymer monolayer field-effect transistors (PoM-FETs) due to intricate crystallization and film formation of conjugated polymers. Here we demonstrate PoM-FETs based on a single monolayer of a conjugated polymer. The resulting PoM-FETs are highly reproducible and exhibit charge carrier mobilities reaching 3 cm2 V−1 s−1. The high performance is attributed to the strong interactions of the polymer chains present already in solution leading to pronounced edge-on packing and well-defined microstructure in the monolayer. The high reproducibility enables the integration of discrete unipolar PoM-FETs into inverters and ring oscillators. Real logic functionality has been demonstrated by constructing a 15-bit code generator in which hundreds of self-assembled PoM-FETs are addressed simultaneously. Our results provide the state-of-the-art example of integrated circuits based on a conjugated polymer monolayer, opening prospective pathways for bottom-up organic electronics.
“…Figure 4c presents the output characteristics of the 15-bit code generator. A bit rate close to 330 bit s −1 is obtained at a supply voltage of −20 V. The circuit performance is comparable to reported state-of-the-art integrated circuits based on bulk organic thin-films, which demonstrates a great potential for the application of the PffBT4T-2DT based PoM-FETs in radio-frequency identification transponders 20 , 65 – 67 . Fig.…”
It is still a great challenge to fabricate conjugated polymer monolayer field-effect transistors (PoM-FETs) due to intricate crystallization and film formation of conjugated polymers. Here we demonstrate PoM-FETs based on a single monolayer of a conjugated polymer. The resulting PoM-FETs are highly reproducible and exhibit charge carrier mobilities reaching 3 cm2 V−1 s−1. The high performance is attributed to the strong interactions of the polymer chains present already in solution leading to pronounced edge-on packing and well-defined microstructure in the monolayer. The high reproducibility enables the integration of discrete unipolar PoM-FETs into inverters and ring oscillators. Real logic functionality has been demonstrated by constructing a 15-bit code generator in which hundreds of self-assembled PoM-FETs are addressed simultaneously. Our results provide the state-of-the-art example of integrated circuits based on a conjugated polymer monolayer, opening prospective pathways for bottom-up organic electronics.
“…The properties are comparable with those of PTs based on amorphous silicon. Meanwhile, it is interesting to see that the devices show a high air-stable property and high photosensitivity via the electric-field enhanced process [1]. All these phenomena were attributed to the intrinsic opticelectronic property of the organic semiconductor and optic-electric field effect.…”
Section: A Materials Propertiesmentioning
confidence: 98%
“…Insulator, semiconductor, and electrodes are basic components of FET. In case of organic electronics, the semiconductor is composed of some organic material, while inorganic material can be used for others [1]. But some manufacturers prefer to make every part by using organic material.…”
Section: Ofetsmentioning
confidence: 99%
“…The Ea depends on EF and EV by Ea ~ EF-EV on EF is the given Fermi level of the material. Ea on Vg changes to the gradual shift of the hole Fermi energy toward the valence band as more empty places become filled because of FET hole injection [1]. The number of injected carriers per unit area is given by…”
Section: B Mobilities In Materialsmentioning
confidence: 99%
“…Si, Ge). Like inorganic semiconductors, holes and electrons are responsible for the flow of current in organic semiconductors [1]. But the difference between these organic and inorganic semiconductors is that organic semiconductors have π conjugate bonds which allow electron movements through π electron cloud overlap.…”
Electronic devices that can physically disappear in a controlled manner without harmful by-products unveil a wide range of opportunities in medical devices, environmental monitoring, and next-generation consumer electronics. Their property of transience is indispensable for mitigating the global problem of electronic waste accumulation. Additionally, transient technologies that are biocompatible and can be biologically resorbed are of great potential for applications in temporary medical implants, since it eliminates the need for expensive device recovery surgery. Transistors are the key building blocks of modern electronics, and their fabrication using organic materials is beneficial due to their low cost, unprecedented flexibility and facile processing. This contribution reviews the technological application of biodegradable materials in four major classes of organic transistors, namely organic field-effect transistors (OFETs), organic synaptic transistors, electrolyte-gated OFETs, and organic electrochemical transistors. The fundamental biodegradation mechanism is discussed in detail, followed by a perspective of various biodegradable materials utilized as active semiconductors, dielectrics, electrolytes and substrates in the various types of organic transistor devices. This contribution comprehensively discusses the role and application of biodegradable materials in all of the key modern-day organic transistors, highlighting their unique properties that allow the fabrication of biodegradable, eco-friendly, and sustainable devices.
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