Progress in GaN Single Crystals: HVPE Growth and Doping

Abstract

Compared with the first and second generation semiconductor materials, the third generation semiconductor materials exhibit higher breakdown field strength, higher saturated electron drift velocity, outstanding thermal conductivity, and wider band gap, suitable for manufacturing of electronic devices with high frequency, high power, radiation resistance, corrosion resistant properties, optoelectronic devices and light emitting devices. As one of the representatives of the third generation of semiconductor materials, gallium nitride (GaN) is

Optimization and Mechanism of SiO2-Based Slurry Components for Atomically Smooth Gallium Nitride Surface Obtained Using Chemical Mechanical Polishing Technique

“…[5][6][7][8][9] These benefits render them more fitting for high frequency, high power, radiation-resistant, and corrosion-resistant semiconductor devices as well as optoelectronic devices. 10 The most prevalent third-generation semiconductors comprise SiC, ZnO, GaN, and AlN. GaN is a direct bandgap semiconductor with a considerable band gap, high breakdown voltage, high thermal conductivity, and small dielectric constant.…”