Progress in IGBT development

Niedernostheide, F.‐J.; Schulze, Hans‐Joachim; Laska, T.; Philippou, Alexander

doi:10.1049/iet-pel.2017.0499

Cited by 19 publications

(7 citation statements)

References 25 publications

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“…Considering movements to larger diameter wafers for power devices, it is obvious that TWP is one of the key technologies. Thereby, the details of TWP, especially about methods to fabricate N-buffer layers, have not been disclosed and still under-covered [18][19][20]. TWP contributes to significant improvements in the performances of IGBT and diode.…”

Section: Improving Fundamental Trade-offmentioning

confidence: 99%

Multidirectional development of IGBTs and diodes: low loss and tough but gentle (user‐friendly) power devices

Honda

Minato

Shimizu

et al. 2019

IET Power Electronics

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From the power loss reduction and safety operation points of view, the direction of power device developments is simply one-way. However, from the application point of view, the direction is wide-ranging. There are a variety of requirements to be considered, such as switching waveforms, operational environments including not only the temperature range but also the combination of the humidity, the cosmic ray endurance, the package compactness and so on. In this study, several efforts are explained as the latest technologies.

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Section: Improving Fundamental Trade-offmentioning

confidence: 99%

Multidirectional development of IGBTs and diodes: low loss and tough but gentle (user‐friendly) power devices

Honda

Minato

Shimizu

et al. 2019

IET Power Electronics

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“…With the development of high-power devices, such as insulated gate bipolar transistors (IGBTs), toward miniaturization, high-current density, and high-tension, a highly efficient approach for heat dissipation in time has become very urgent, which has a detrimental effect on the performance and lifetime of these devices. − Generally, there are three typical methods for heat dissipation, i.e., thermal conduction, convection, and radiation. , Traditional radiator fans and cooling fins have been widely used to enhance heat convection and thermal conduction, respectively. However, given the increasing demand on higher-power devices, these methods are insufficient for heat dissipation, resulting in power-off protection and thus decreasing the operating efficiency.…”

Section: Introductionmentioning

confidence: 99%

In Situ Combustion Synthesis of Gr/h-BN Composites and Its Passive Heat Dissipation Application

et al. 2022

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To enhance the infrared radiation efficiency and the heat transfer performance simultaneously, graphene (Gr) was synthesized in situ on hexagonal boron nitride (h-BN) to prepare Gr/h-BN composites by a scalable combustion synthesis in CO 2 atmosphere using Mg as sacrificial solder. The synthesized Gr/h-BN composites were added in polydimethylsiloxane polymer to prepare composite coatings, which show an infrared emissivity greater than 0.95 and a through-plane thermal conductivity up to 2.584 W•m −1 •K −1 . When functioning on an Al heatsink, such a composite coating can reduce the temperature by as much as 21.7 °C. Meanwhile, the composite coating exhibits superior adhesion on the Al substrate. Therefore, Gr/h-BN composite coatings with noteworthy infrared radiation and thermal conductivity are expected to be a promising candidate for heat dissipation applications.

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“…It is important to clarify the effect of the oxygen suppression in wafers on wafer strength, particularly in power devices because they use wafers with extremely low oxygen concentrations. [24][25][26] Various studies have been conducted on the changes in wafer strength due to the differences in the oxygen concentration, particularly from a microscopic perspective, such as the changes in strength due to dislocation, elongation, and precipitate formation. [27][28][29] Therefore, it is useful to confirm the oxygen dependence of defect formation and the strength change caused by ion implantation.…”

Section: Introductionmentioning

confidence: 99%

Effect of ion implantation on mechanical strength of silicon wafers

Takata

Fujise

et al. 2022

Jpn. J. Appl. Phys.

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This study investigates the effects of the secondary defects caused by ion implantation on wafer strength. The change in wafer strength with the ion implantation amount has been examined after implanting phosphorus or boron ions into wafers with and without heat treatment. Ion implantation defects have been observed using transmission electron microscopy after ion implantation and recovery annealing. The three-point bending tests carried out with the ion implanted samples show that the upper yield stress, which represents wafer strength, decreases owing to implantation-induced secondary defects. In addition, the strength of the wafers with a low oxygen concentration is lower than that of the wafers with a high oxygen concentration. However, the rate of decrease in wafer strength as a function of implantation amount is not affected by the oxygen concentration; it only depended on the implanted element.

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Progress in IGBT development

Cited by 19 publications

References 25 publications

Multidirectional development of IGBTs and diodes: low loss and tough but gentle (user‐friendly) power devices

Multidirectional development of IGBTs and diodes: low loss and tough but gentle (user‐friendly) power devices

In Situ Combustion Synthesis of Gr/h-BN Composites and Its Passive Heat Dissipation Application

Effect of ion implantation on mechanical strength of silicon wafers

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