Progress in Performance of AlGaN‐Based Ultraviolet Light Emitting Diodes

Lang, Jing; Xu, Fujun; Wang, Jiaming; Zhang, Lisheng; Fang, Xuzhou; Zhang, Ziyao; Guo, Xueqi; Ji, Chen; Ji, Chengzhi; Tan, Fuyun; Wu, Yong; Yang, Xuelin; Kang, Xiangning; Qin, Zhixin; Tang, Ning; Wang, Xinqiang; Ge, Weikun; Shen, Bo

doi:10.1002/aelm.202300840

Cited by 6 publications

(1 citation statement)

References 207 publications

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“…The sample A3 was subjected to the smallest tensile stress during growth, less than 0.1 Gpa, and the corresponding edge TDD was as low as 6.31 × 10 7 cm −2 , the TDD was 1.2 × 10 8 cm −2 . This is a pretty good value of epitaxial AlN grown on flat sapphire substrates reported before [3,[39][40][41]. To the best of our knowledge, the previous lowest TDD result for MOCVD direct epitaxy of AlN on a flat sapphire substrate was 1.5 × 10 8 cm −2 .…”

Section: Resultssupporting

confidence: 73%

Effect of stress control by growth adjustment on the edge thread dislocation density of AlN grown on the sapphire

Zhang,

Yang,

Liang

et al. 2024

Semicond. Sci. Technol.

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The relationship between stress and dislocation density in MOCVD epitaxial AlN was studied. It has been found that the AlN epitaxial layer generates tensile stress when the crystal islands are merged. By controlling the size and density of crystal islands at the end of 3D growth, the tensile stress generated during epitaxy can be effectively reduced. Mechanical calculations show that there is a linear relationship between the edge thread dislocations density of AlN and the tensile stress during growth. By controlling the stress during AlN growth below 0.1 Gpa, a high-quality AlN sample with an edge thread dislocation density of 6.31×107 cm-2 was obtained.

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Section: Resultssupporting

confidence: 73%

Effect of stress control by growth adjustment on the edge thread dislocation density of AlN grown on the sapphire

Zhang,

Yang,

Liang

et al. 2024

Semicond. Sci. Technol.

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The Influence of Alloy Disorder Effects on the Anisotropy of Emission Diagrams in (Al,Ga)N Quantum Wells Embedded into AlN Barriers

Ibanez,

Leroux,

Nikitskiy

et al. 2024

Physica Status Solidi (b)

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The polarized photoluminescence emitted on the edge of a series of aluminum‐rich (Al,Ga)N‐AlN quantum wells (QWs) grown by molecular beam epitaxy on AlN templates deposited by metal organic chemical vapor deposition on c‐plane sapphire is measured. The contrast and the principal axis of the emission diagrams for 2 nm‐thick (Al,Ga)N QWs grown for aluminum compositions between 40% and 90% are studied. The light is emitted on the edge of the QWs at wavelengths going from 280 nm down to 209 nm. The emission diagram, a change from oblate to prolate with respect to the in‐plane orientation, for an aluminum composition is found to occur around 72%, that is, at an emission wavelength of about 235 nm. The orientations and shapes of the edge‐emission diagrams indicate that the fluctuations of the composition of the (Al,Ga)N confining layer are deep enough for producing intravalence band mixings. This property, that acts in concert with the built‐in strain and quantum‐confined Stark effect, contributes to the anisotropy of the light emission when the aluminum composition reaches 60–70%, that is, for an emission wavelength of 260–235 nm.

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Optimization of Growth Temperature and V/III Ratio toward High-Quality Si-Doped Aluminum Nitride Thin Films on Sapphire

Cao,

Nong,

Tang

et al. 2024

Crystal Growth & Design

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Ultrawide-band-gap aluminum nitride (AlN) boasts high breakdown field strength, superior thermal conductivity, and exceptional stability, making it ideal for deep ultraviolet optoelectronics, radio frequency, and power devices. To date, the epitaxial growth of high-quality doped AlN via MOCVD has primarily been on AlN or SiC single-crystal substrates to reduce dislocation densities. However, the limited size and high cost of these single-crystal substrates necessitate the exploration of alternative substrates to enhance commercial viability. This study demonstrates and analyzes the epitaxial growth modes and conductivity modulation mechanisms of AlN:Si on a cost-effective sapphire substrate. By adjusting MOCVD epitaxial parameters: growth temperature and V/III ratio, we controlled the impact of compensating defects (CN and VAl) on conductivity, achieving conductivity enhancements of 26 and 41%, respectively. Our research validates the feasibility of obtaining AlN:Si with enhanced electrical performance and crystal quality on sapphire substrates. It represents a significant step toward the development of high-power, high-efficiency AlN electronic devices.

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Progress in Performance of AlGaN‐Based Ultraviolet Light Emitting Diodes

Cited by 6 publications

References 207 publications

Effect of stress control by growth adjustment on the edge thread dislocation density of AlN grown on the sapphire

Effect of stress control by growth adjustment on the edge thread dislocation density of AlN grown on the sapphire

The Influence of Alloy Disorder Effects on the Anisotropy of Emission Diagrams in (Al,Ga)N Quantum Wells Embedded into AlN Barriers

Optimization of Growth Temperature and V/III Ratio toward High-Quality Si-Doped Aluminum Nitride Thin Films on Sapphire

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