Progress in SiC nanowire field-effect-transistors for integrated circuits and sensing applications

Zekentes, K.; Choi, Jihoon; Stambouli, Valérie; Bano, Edwige; Karker, Olfa; Rogdakis, Konstantinos

doi:10.1016/j.mee.2021.111704

Cited by 20 publications

(25 citation statements)

References 140 publications

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“…Compared with 2D materials, NWs are more suitable for high integration and low power consumption synaptic devices. Nowadays, NWs have been integrated into diodes [30], field effect transistors (FETs) [31], memories [32], photodetectors [33], solar cells [34], and synaptic devices [19,23,35]. Based on the basic synaptic functionalities of NW-based synaptic devices, NWs can be constructed for neuromorphic computing.…”

Section: Introductionmentioning

confidence: 99%

Nanowire-based synaptic devices for neuromorphic computing

Chen

Zhao

et al. 2023

Mater. Futures

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The traditional von Neumann structure computers cannot meet the demand of high-speed big data processing, therefore, neuromorphic computing has got a lot of interest in recent years. Brain-inspired neuromorphic computing has the advantages of low power consumption, high-speed and high-accuracy. In human brains, the data transmission and processing are realized through synapses. Artificial synaptic devices can be adopted to mimic the biological synaptic functionalities. Nanowire is an important building block for nanoelectronics and optoelectronics, and many efforts have been made to promote the application of nanowires based synaptic devices for neuromorphic computing. Here, we will introduce the current progress of nanowires based synaptic memristors and synaptic transistors. The applications of nanowires based synaptic devices for neuromorphic computing will be discussed. The challenges faced by nanowires based synaptic devices will be proposed. We hope this perspective will be beneficial for the application of nanowires based synaptic devices in neuromorphic systems.

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Section: Introductionmentioning

confidence: 99%

Nanowire-based synaptic devices for neuromorphic computing

Chen

Zhao

et al. 2023

Mater. Futures

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“…Silicon carbide (SiC) is currently attracting great interest due to the superior properties like wide energy bandgap, high thermal conductivity, high electron drift velocity, and excellent chemical and physical stability. , In applications, defects in SiC play a significant role, such as color centers in quantum applications, , Si-vacancy-related ferromagnetism in spintronic devices, and temperature monitors associated with defect recovery . It is well known that ion irradiation is widely used to introduce defects in materials in a controllable way. ,, Therefore, it could be foreseen that desired defects can be produced as expected by energetic ion irradiation if the defect generation rate is accurately known.…”

Section: Introductionmentioning

confidence: 99%

Accurate Measurement of Defect Generation Rates in Silicon Carbide Irradiated with Energetic Ions

Guo,

Peng,

Liu

et al. 2023

ACS Omega

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In this work, we obtained the Si vacancy generation rates η in SiC nanowire samples irradiated with 1, 3 MeV protons, and 2.8 MeV helium ions using the electrical resistivity measurement, which further indicated an intuitive linear function correlation between η and the nuclear stopping power of the incident ions at a low dpa level with a coefficient of 2.15 × 10 −3 eV −1 . Prediction through this correlation is consistent with previous work. Besides, the measured value is about 1/2 of the simulation results with the popular SRIM code. Overall, our work provides a feasible way to get the generation rate of a certain irradiation-induced defect by electric measurements, and the correlation obtained is practically useful in various applications.

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“…One of the leading and most important areas of research in the field of microelectronics is the study of the resistance of microelectronic devices and semiconductor devices to radiation, as well as the assessment of their degradation under operating conditions when exposed to ionizing radiation and increased background radiation [ 1 , 2 ]. This area of research has been of high relevance in recent years due to the increase in the number of manufactured devices and their areas of application, with the transition of most industries to robotization, as well as the complications and reduction in the geometric dimensions of microcircuits and semiconductor devices, which requires the abandonment of most traditional methods of protection against the negative effects of ionizing radiation [ 3 , 4 , 5 ]. This problem is especially acute in space technology and nuclear power engineering and when operating instruments under conditions of exposure to radiation, particularly with high-energy electrons, gamma radiation, protons or heavy ions [ 6 ].…”

Section: Introductionmentioning

confidence: 99%

Investigation of the Efficiency of Shielding Gamma and Electron Radiation Using Glasses Based on TeO2-WO3-Bi2O3-MoO3-SiO to Protect Electronic Circuits from the Negative Effects of Ionizing Radiation

et al. 2022

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This article considers the effect of MoO3 and SiO additives in telluride glasses on the shielding characteristics and protection of electronic microcircuits operating under conditions of increased radiation background or cosmic radiation. MoO3 and SiO dopants were chosen because their properties, including their insulating characteristics, make it possible to avoid breakdown processes caused by radiation damage. The relevance of the study consists in the proposed method of using protective glasses to protect the most important components of electronic circuits from the negative effects of ionizing radiation, which can cause failures or lead to destabilization of the electronics. Evaluation of the shielding efficiency of gamma and electron radiation was carried out using a standard method for determining the change in the threshold voltage (∆U) value of microcircuits placed behind the shield and subjected to irradiation with various doses. It was established that an increase in the content of MoO3 and SiO in the glass structure led to an increase of up to 90% in the gamma radiation shielding efficiency, while maintaining the stability of microcircuit performance under prolonged exposure to ionizing radiation. The results obtained allow us to conclude that the use of protective glasses based on TeO2–WO3–Bi2O3–MoO3–SiO is highly promising for creating local protection for the main components of microcircuits and semiconductor devices operating under conditions of increased background radiation or cosmic radiation.

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Progress in SiC nanowire field-effect-transistors for integrated circuits and sensing applications

Cited by 20 publications

References 140 publications

Nanowire-based synaptic devices for neuromorphic computing

Nanowire-based synaptic devices for neuromorphic computing

Accurate Measurement of Defect Generation Rates in Silicon Carbide Irradiated with Energetic Ions

Investigation of the Efficiency of Shielding Gamma and Electron Radiation Using Glasses Based on TeO2-WO3-Bi2O3-MoO3-SiO to Protect Electronic Circuits from the Negative Effects of Ionizing Radiation

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