Progress of hidden spin polarization in inversion-symmetric crystals

Guan, Shaokang; Xiong, Jia-Xin; Zhi, Wang; Luo, Jun-Wei

doi:10.1007/s11433-021-1821-1

Cited by 10 publications

(3 citation statements)

References 92 publications

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“…The electric field E that the electron feels can arise from the bulk inversion asymmetry (BIA) and structural inversion asymmetry (SIA), resulting in the emergence of Dresselhaus SOC and Rashba SOC, respectively. [69,70] Although bulk Si and Ge do not have Dresselhaus SOC due to the centrosymmetric symmetry of O h group, their nanostructures exhibit a rich variety of SOC, for example, the Rashba SOC originating from SIA in QWs and nanowires induced by external electric fields along the confinement direction. The SOC in Si and Ge nanostructures is a double-edged sword for the gate-defined QDs formed on them.…”

Section: Spin-orbit Couplingmentioning

confidence: 99%

Progress of Gate‐Defined Semiconductor Spin Qubit: Host Materials and Device Geometries

Liu,

Guan,

Luo

et al. 2024

Adv Funct Materials

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Quantum computing offers the potential to revolutionize information processing by exploiting the principles of quantum mechanics. Among the diverse quantum bit (qubit) technologies, silicon‐based semiconductor spin qubits have emerged as a promising contender due to their potential scalability and compatibility with existing semiconductor technologies. In this paper, the latest developments of spin qubits in gate‐defined semiconducting nanostructures made of silicon and germanium, starting from the basic properties of electron and hole states in group‐IV semiconductors, are reviewed. Specifically, various nanostructures that exploit their unique microscopic properties for qubit implementations, elaborating on the advances and challenges in experiments, are discussed. Strategies for enhancing qubit performance, such as designing new nanostructures and identifying suitable operating points, particularly those involving the valleys of electron qubits and the heavy‐hole–light‐hole mixing of hole qubits, are also highlighted. This comprehensive review thus provides valuable insights into the current state‐of‐the‐art in semiconductor quantum computing and suggests avenues for future research.

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Section: Spin-orbit Couplingmentioning

confidence: 99%

Progress of Gate‐Defined Semiconductor Spin Qubit: Host Materials and Device Geometries

Liu,

Guan,

Luo

et al. 2024

Adv Funct Materials

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“…The basis for Pauli matrices |ρ z = ±⟩ is spanned by the two sublattice degrees of freedom, and thus ρ z indicates that the antisymmetric spin-orbit coupling (g −k = −g k ) appears in a staggered manner for electrons localized at each sublattice. The expression for the vector g k is determined by the local site symmetry of the sublattice (Fischer et al, 2023;Guan et al, 2022) such as…”

Section: B Hidden Magnetic Degrees Of Freedom In Crystalsmentioning

confidence: 99%

Photocurrent response in parity-time symmetric current-ordered states

Watanabe

Yanase

2021

Phys. Rev. B

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Parity-time-reversal symmetry (PT symmetry), a symmetry for the combined operations of space inversion (P) and time reversal (T ), is a fundamental concept of physics and characterizes the functionality of materials as well as P and T symmetries. In particular, the PT -symmetric systems can be found in the centrosymmetric crystals undergoing the parity-violating magnetic order which we call the odd-parity magnetic multipole order. While this spontaneous order leaves PT symmetry intact, the simultaneous violation of P and T symmetries gives rise to various emergent responses that are qualitatively different from those allowed by the nonmagnetic P-symmetry breaking or by the ferromagnetic order. In this review, we introduce candidates hosting the intriguing spontaneous order and overview the characteristic physical responses. Various off-diagonal and/or nonreciprocal responses are identified, which are closely related to the unusual electronic structures such as hidden spin-momentum locking and asymmetric band dispersion. Contents I. Introduction II. Magnetic Parity Violation and Space-Time Symmetry A. Parity-time-reversal symmetry and parity violations B. Hidden Magnetic Degrees of Freedom in Crystals C. Multipolar degree of freedom of visible antiferromagnets III. Emergent Responses of PT -symmetric magnets A. Electric-Magnetic Classification of Response Function B. Magnetic Counterpart of Piezoelectric Effect C. Nonreciprocal Property of Electronic Transport and Optical Response 1. Nonreciprocal conductivity 2. Photocurrent generation IV. Availability of PT -symmetric Magnets and Physical Properties A. Switching the compensated magnets B. Control of electronic property with PT -symmetric magnetic order V.

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“…Recent studies revealed that a related form of hidden spin polarization (HSP) should exist even in centrosymmetric crystals, as long as atomic sites individually break inversion symmetry locally [3,4]. Such an HSP effect could significantly expand the pool of potential materials for spintronics [5,6], and provide new physical insights into the relevant hidden physics such as optical polarization, valley polarization, orbital polarization, Berry curvature, etc [7][8][9][10][11][12][13][14][15][16][17]. Owing to the coexistence of P and time-reversal symmetry T, the HSP in nonmagnetic materials localized at a sector P k (r) is odd distributed in both real and momentum spaces, i.e., P k (r) = −P k (−r), and P k (r) = −P −k (r).…”

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confidence: 99%

Role of hidden spin polarization in non-reciprocal transport of antiferromagnets

Chen¹,

Gu²,

Li³

et al. 2022

Preprint

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The discovery of hidden spin polarization (HSP) in centrosymmetric nonmagnetic crystals, i.e., spatially distributed spin polarization originated from local symmetry breaking, has promised an expanded material pool for future spintronics. However, the measurements of such exotic effects have been limited to subtle space-and momentum-resolved techniques, unfortunately hindering their applications. Here, we theoretically predict macroscopic non-reciprocal transports induced by HSP when coupling another spatially distributed quantity, such as staggered local moments in a PT -symmetric antiferromagnet. By using a four-band model Hamiltonian, we demonstrate that HSP plays a crucial role in determining the asymmetric bands with respect to opposite momenta. Such band asymmetry leads to non-reciprocal nonlinear conductivity, exemplified by tetragonal CuMnAs via our first-principles calculations. We further provide the material design principles for large nonlinear conductivity, including two-dimensional nature, multiple band crossings near the Fermi level, and symmetry protected HSP. Our work not only reveals direct spintronic applications of HSP (such as Néel order detection), but also sheds light on finding observables of other hidden effects, such as hidden optical polarization and hidden Berry curvature.

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Progress of hidden spin polarization in inversion-symmetric crystals

Cited by 10 publications

References 92 publications

Progress of Gate‐Defined Semiconductor Spin Qubit: Host Materials and Device Geometries

Progress of Gate‐Defined Semiconductor Spin Qubit: Host Materials and Device Geometries

Photocurrent response in parity-time symmetric current-ordered states

Role of hidden spin polarization in non-reciprocal transport of antiferromagnets

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