higher carrier mobility and longer carrier lifetime, thanks to their fewer grain boundaries, enhanced crystallinity and reduced trap density. With such performance improvements, the lead-free halide perovskite single crystal is considered to be a promising photosensitive material in optoelectronic devices. [6] In order to effectively promote power conversion efficiency, the thickness of leadfree halide perovskite single crystal should be controlled at a suitable level, which is suggested to be greater than light-absorption length and less than carrier-diffusion length. [7] In the current semiconductor and photoelectronic industries, thin silicon wafers are fabricated mainly through top-down process, which requires high yields accompanied with large material loss, waste and subsequent complicated slicing process. Against this background, a facile and effective space-confined fabrication is adopted to produce large singlecrystalline thin film, through a bottom-up process. [8] Compared with vapor epitaxial growth and cavitation triggered asymmetrical crystallization, [9] space-confined methods possess moderate growth conditions to grow SCTF without rigorous restrictions. However, this method is limited to the growth of organic-inorganic lead halide perovskite SCTF, few studies focus on lead-free halide perovskite SCTF, such as Sn-based, Bi-based and Sb-based, etc. This is limited by the lack of understanding of the precursor solution chemistry in space-confined method. [10] Although previous work pointed out that the preheated-substrate and local heating are important in the space-confined growth, [11] there is a lack of investigation on the influence of the precursor solution temperature on the crystallization process. In general, the growth drive force of the space-confined growth is considered to be inverse-temperature crystallization or solvent evaporation, in which the supersaturation plays a key role in controlling size and quality. [12] An indepth insight of the relationship between the nucleation and crystallization process in the precursor solution is of significant importance. Therefore, it is necessary to clarify the effects of supersaturation in the space-confined growth.Furthermore, the space-confined method demonstrates the advantage of substrate-independent characteristics, which facilitate convenient integration of lead-free halide perovskite SCTF Monolithical integration of the promising optoelectronic material with mature and inexpensive silicon circuitry contributes to simplifying device geometry, enhancing performance, and expanding new functionalities. Herein, a leadfree halide perovskite Cs 3 Bi 2 I 9 single-crystalline thin film (SCTF), with thickness ranging from 900 nm to 4.1 µm and aspect ratio up to 1666, is directly integrated on various substrates including Si wafer, through a facile and lowtemperature solution-processing method. The growth kinetics of the lead-free halide perovskite SCTF are elucidated by in situ observation, and the solution supersaturation is controlled to reduce the ...