Progress of Na-Flux Method for Large-Size GaN Single Crystal Growth

Pan, Ronglin; Zhou, Mingbin; Xiong, Zuhong; Wen, Wu; Ao, Lei; Li, Qi; Luo, Gen

doi:10.1007/s11664-022-09905-z

Cited by 10 publications

(11 citation statements)

References 89 publications

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“…The liquid medium dissolves and promotes chemical interactions between the precursors and assists in crystallization at temperatures well below the typical melting point of the constituents. [22,23] But these liquid fluxing agents can also be utilized for material synthesis and grain growth in thin-film formation. Liquid phases provided through alkali metals, [24] molten chalcogenides, [20,25] and additional dopants (Sb 2 S 3 , CuSbS 2 , NaSb 5 S 8 ) [26] have achieved enhanced grain growth in several related chalcogenide materials.…”

Section: Liquid-assisted Grain Growth Mechanismmentioning

confidence: 99%

Liquid Flux–Assisted Mechanism for Modest Temperature Synthesis of Large‐Grain BaZrS₃ and BaHfS₃ Chalcogenide Perovskites

Vincent

Agarwal

Turnley

2023

Adv Energy and Sustain Res

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Chalcogenide perovskites are promising semiconductor materials with attractive optoelectronic properties and appreciable stability, making them enticing candidates for photovoltaics and related electronic applications. Traditional synthesis methods for these materials have long suffered from high‐temperature requirements of 800–1000 °C. However, the recently developed solution processing route provides a way to circumvent this. By utilizing barium thiolate and ZrH2, this method is capable of synthesizing BaZrS3 perovskite at modest temperatures (500–600 °C), generating crystalline domains on the order of hundreds of nanometers in size. Herein, a systematic study of this solution processing route is done to gain a mechanistic understanding of the process and to supplement the development of device quality fabrication methodologies. A barium polysulfide liquid flux is identified as playing a key role in the rapid synthesis of large‐grain BaZrS3 perovskite at modest temperatures. Additionally, this mechanism is successfully extended to the related BaHfS3 perovskite. The reported findings identify viable precursors, key temperature regimes, and reaction conditions that are likely to enable the large‐grain chalcogenide perovskite growth, essential toward the formation of device‐quality thin films.

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Section: Liquid-assisted Grain Growth Mechanismmentioning

confidence: 99%

Liquid Flux–Assisted Mechanism for Modest Temperature Synthesis of Large‐Grain BaZrS₃ and BaHfS₃ Chalcogenide Perovskites

Vincent

Agarwal

Turnley

2023

Adv Energy and Sustain Res

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“…Though several methods exist to produce bulk crystals of gallium nitride (GaN), none have been commercialized on a large scale. The Na-flux method, which involves precipitation of GaN from a sodium–gallium melt supersaturated with nitrogen, offers potentially lower cost production due to relatively mild process conditions while maintaining high crystal quality. − …”

Section: Introductionmentioning

confidence: 99%

Numerical Simulation of Temperature Field Optimization to Enhance Nitrogen Transfer in GaN Crystal Growth by the Na-Flux Method

et al. 2023

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Improved nitrogen transport is crucial for enhancing the growth rate of GaN crystals using the Na-flux method. This study investigates the nitrogen transport mechanism during the growth of GaN crystals by the Na-flux method using a combination of numerical simulations and experiments. The results indicate that the temperature field affects the effect of nitrogen transfer, and we propose a novel bottom ring heating approach to optimize the temperature field and enhance nitrogen transfer during the growth of GaN crystals. The simulation results demonstrate that optimizing the temperature field improves nitrogen transfer by causing convection within the melt to float up from the crucible wall and sink at the crucible center. This enhancement improves the nitrogen transfer from the gas–liquid interface to the GaN crystal growth surface, thereby accelerating the growth rate of GaN crystals. Additionally, the simulation results indicate that the optimized temperature field substantially reduces polycrystalline generation at the crucible wall. These findings are also a realistic guide to the growth of other crystals in the liquid phase method.

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“…[60][61][62][63][64][65][66] A recent review provides an overview of the literature. 67 There is a wide range in the descriptions of types of equipment used in Na-flux growth of GaN, from very simple tungsten crucibles at 2 bar (0.2 MPa) 66 to quite complicated sealed enclosures with sodium management at 4-5 MPa, see Figure 6. 63 Temperatures are typically quoted in the 800-900 • C range and crucible materials described include W, Mo, BN and aluminum oxide.…”

Section: Flux Growthmentioning

confidence: 99%

“…73 Simultaneously, conversion yield for gallium goes up to nearly 100% and the nitrogen over-pressure can be lowered somewhat. Still other alloying metals like Al and Sr are summarized elsewhere, see [67].…”

Section: Flux Growthmentioning

confidence: 99%

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Prospective view of nitride material synthesis

Stoddard

Pimputkar

2023

Int J Ceramic Engine & Sci

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The field of nitride‐based materials is producing some of the most promising and interesting candidates for advanced technology applications. Novel formulations and polymorphs are of interest for applications requiring one or more of: high hardness, high oxygen resistance at elevated temperatures, catalytic action, semiconductor light sources, and (ultra‐)wide band gap electronics. The synthesis of nitrides with excellent single crystal structural quality of an appreciable size is challenging whether working in solution growth techniques like ammonothermal and flux growth, or in vapor deposition techniques. This paper presents a perspective on recent developments in equipment and techniques for single crystal nitride synthesis with a view toward progress anticipated in the next 5–10 years.

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Progress of Na-Flux Method for Large-Size GaN Single Crystal Growth

Cited by 10 publications

References 89 publications

Liquid Flux–Assisted Mechanism for Modest Temperature Synthesis of Large‐Grain BaZrS₃ and BaHfS₃ Chalcogenide Perovskites

Liquid Flux–Assisted Mechanism for Modest Temperature Synthesis of Large‐Grain BaZrS₃ and BaHfS₃ Chalcogenide Perovskites

Numerical Simulation of Temperature Field Optimization to Enhance Nitrogen Transfer in GaN Crystal Growth by the Na-Flux Method

Prospective view of nitride material synthesis

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Progress of Na-Flux Method for Large-Size GaN Single Crystal Growth

Cited by 10 publications

References 89 publications

Liquid Flux–Assisted Mechanism for Modest Temperature Synthesis of Large‐Grain BaZrS3 and BaHfS3 Chalcogenide Perovskites

Liquid Flux–Assisted Mechanism for Modest Temperature Synthesis of Large‐Grain BaZrS3 and BaHfS3 Chalcogenide Perovskites

Numerical Simulation of Temperature Field Optimization to Enhance Nitrogen Transfer in GaN Crystal Growth by the Na-Flux Method

Prospective view of nitride material synthesis

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Product

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About

Liquid Flux–Assisted Mechanism for Modest Temperature Synthesis of Large‐Grain BaZrS₃ and BaHfS₃ Chalcogenide Perovskites

Liquid Flux–Assisted Mechanism for Modest Temperature Synthesis of Large‐Grain BaZrS₃ and BaHfS₃ Chalcogenide Perovskites