Progress of NIL template making

Yusa, Satoshi; Hiraka, Takaaki; Kobiki, Ayumi; Sasaki, Shiho; Itoh, Kimio; Toyama, Nobuhito; Kurihara, Masaaki; Mohri, Hiroshi; Hayashi, Naoya

doi:10.1117/12.729036

Cited by 4 publications

(5 citation statements)

References 3 publications

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“…1,2 Figure 2 is cross sectional SEM images of resist patterns with a half pitch (hp) of 22, 24, and 26nm. 3 These fine features are realized by a combination of a 100kV-SB writer and a non-CAR. Now this combination is employed as our standard for making hp22nm features.…”

Section: Introductionmentioning

confidence: 99%

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Hybrid EB-writing technique with a 50 kV-VSB writer and a 100 kV-SB writer for nanoimprint mold fabrication

et al. 2007

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Nanoimprint lithography is a candidate for lithography for the hp32nm and hp22nm nodes. Molds or templates for it are being developed on the basis of the process of making phase-shift photomasks. The combination of a 50 kV-VSB (variable shaped beam) EB writer and a chemically amplified resist (CAR) does not have a resolution sufficient for 1X patterning. On the other hand, a combination of a 100 kV-SB (spot beam) EB writer and a non-CAR satisfies the resolution requirement, but this combination leads to an extremely low throughput due to low resist sensitivity.To increase the throughput, we have examined double patterning and double exposure with hybrid use of two different types of writers, a 50 kV-VSB writer, JBX-9000MV, for delineating fine features and a 100 kV-SB writer, JBX-9300FS, for delineating rough features. Overlay accuracy is a key item in such hybrid writing. The results of an overlay accuracy evaluation together with a throughput improvement will be reported in this paper. An estimation of the time for writing a gate layer has given a good example; the writing time for hybrid writing is reduced to about half of the time for 100kV-SB writing. The overlay accuracy for double patterning is found to be 20nm (3σ). However, we are confident that we will be able obtain an overlay accuracy of 10nm (3σ) by improving the image placement accuracy of the JBX-9300FS. An example of double exposure is also shown.

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Section: Introductionmentioning

confidence: 99%

“…Figures 1 and 2 show some results on 1X patterning. [1][2][3] Figure 1 is SEM images of resist and etched quartz, the patterns of which are delineated by a 100kV-SB (spot beam) EB writer, and SEM images of etched quartz obtained with a 50kV-VSB writer. The 100kV-SB writer gives higher resolution.…”

Section: Introductionmentioning

confidence: 99%

Hybrid EB-writing technique with a 50 kV-VSB writer and a 100 kV-SB writer for nanoimprint mold fabrication

et al. 2007

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“…For the NIL template pattern making, we have been evaluating two different processes with 100keV SB EB writer and 50keV VSB EB writer [1][2][3][4][5] . The 100keV SB writer is for R&D purpose, and has high resolution capability.…”

Section: Introductionmentioning

confidence: 99%

UV NIL template making and imprint evaluation

Sasaki

Hiraka

Mizuochi

et al. 2009

25th European Mask and Lithography Conference

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UV NIL shows excellent resolution capability with remarkable low line edge roughness, and has been attracting pioneers in the industry who were searching for the finest patterns.We have been focused on the resolution improvement in NIL template making with a 100keV acceleration voltage spot beam EB writer process, and have established a template making process to meet the requirements of the pioneers. Usually such templates needed just a small field (several hundred microns square or so)Now, for several semiconductor devices, the UV NIL is considered not only as a patterning solution for R&D purpose but eventually as a potential candidate for production, and instead of a small field, a full chip field mask is required. Although the 100kV EB writers have excellent resolution capability, they are adopting spot beams (SB) to generate the pattern and have a fatally low throughput if we need full chip writing.In this paper, we are focusing on the 50keV variable shaped beam (VSB) EB writers, which are used in current 4X photomask manufacturing. The 50keV VSB writers can generate full chip pattern in a reasonable time, and by choosing the right patterning material and process, we achieved resolution down to hp28nm, and initial promising results of hp22nm (partial resolution) for line and spaces, and hp26nm for dense holes were observed..

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“…For the NIL template pattern making, we have been evaluating two different processes, one with the 100keV SB EB writer, and the other with the 50keV VSB EB writers [1][2][3][4][5] . The 100keV SB writer has high resolution capability.…”

Section: Introductionmentioning

confidence: 99%

Progress of UV-NIL template making

et al. 2009

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Nano-imprint lithography (NIL) has been counted as one of the lithography candidates for hp32nm node and beyond and has showed excellent resolution capability with remarkable low line edge roughness that is attracting many researchers in the industry who were searching for the finest patterning technology. Therefore, recently we have been focusing on the resolution improvement on the NIL templates with the 100keV acceleration voltage spot beam (SB) EB writer and the 50keV acceleration voltage variable shaped beam (VSB) EB writer.The 100keV SB writers have high resolution capability, but they show fatally low throughput if we need full chip writing. Usually templates for resolution pioneers needed just a small field (several hundred microns square or so), but recently requirements for full chip templates are increasing. For full chip writing, we have also started the resolution improvement with the 50keV VSB writers used in current 4X photomask manufacturing. The 50keV VSB writers could generate full chip pattern in a reasonable time though resolution limits are inferior to that with the 100keV SB writers.In this paper, we will show latest results with both the 100keV SB and the 50keV VSB EB writers. With the 100keV SB EB writer, we have achieved down to hp15nm resolution for line and space pattern, but found that to achieve further improvement, an innovation in pattern generation method or material would be inevitable. With the 50keV VSB EB writer, we have achieved down to hp22nm resolution for line and space pattern.Though NIL has excellent resolution capability, solutions for defect inspection and repair are not clearly shown yet. In this paper, we will show preliminary inspection results with an EB inspection tool. We tested an EB inspection tool by Hermes Microvision, Inc. (HMI), which was originally developed for and are currently used as a wafer inspection tool, and now have been started to seek the application for mask use, using a programmed defect template.

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Progress of NIL template making

Cited by 4 publications

References 3 publications

Hybrid EB-writing technique with a 50 kV-VSB writer and a 100 kV-SB writer for nanoimprint mold fabrication

Hybrid EB-writing technique with a 50 kV-VSB writer and a 100 kV-SB writer for nanoimprint mold fabrication

UV NIL template making and imprint evaluation

Progress of UV-NIL template making

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