Progress of Raman spectroscopy technology for the detection of material composition on the surface of Mars

Xie, Xinmei; Yang, Jianfeng

doi:10.1117/12.2651495

Cited by 1 publication

(1 citation statement)

References 7 publications

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“…In a typical experiment of MoS 2 monolayer epitaxy from its CsCl solution at 850 °C, MoS 2 in CsCl solution was condensed on a sapphire substrate for LPEE (Methods and Figure S1). A home-built high-temperature optical microscope 22 was equipped into the CVD furnace to record the in situ growth process. The in situ optical imaging clearly showed that the MoS 2 flake was growing (with a rate of 1−2 μm/s) as the liquid droplet was moving (Figure 1b).…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Liquid Phase Edge Epitaxy of Transition-Metal Dichalcogenide Monolayers

Hussain,

Zhou,

et al. 2023

J. Am. Chem. Soc.

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Precise monolayer epitaxy is important for two-dimensional (2D) semiconductors toward future electronics. Here, we report a new self-limited epitaxy approach, liquid phase edge epitaxy (LPEE), for precise-monolayer epitaxy of transition-metal dichalcogenides. In this method, the liquid solution contacts 2D grains only at the edges, which confines the epitaxy only at the grain edges and then precise monolayer epitaxy can be achieved. High-temperature in situ imaging of the epitaxy progress directly supports this edge-contact epitaxy mechanism. Typical transition-metal dichalcogenide monolayers (MX2, M = Mo, W, and Re; X = S or Se) have been obtained by LPEE with a proper choice of molten alkali halide solvents (AL, A = Li, Na, K, and Cs; L = Cl, Br, or I). Furthermore, alloying and magnetic-element doping have also been realized by taking advantage of the liquid phase epitaxy approach. This LPEE method provides a precise and highly versatile approach for 2D monolayer epitaxy and can revolutionize the growth of 2D materials toward electronic applications.

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Section: ■ Results and Discussionmentioning

confidence: 99%