Progress on two-dimensional ferrovalley materials

Abstract

The electron’s charge and spin degrees of freedom are at the core of modern electronic devices. With the in-depth investigation of two-dimensional materials, another degree of freedom, valley, has also attracted tremendous research interest. The intrinsic spontaneous valley polarization in two-dimensional magnetic systems, ferrovalley material, provides convenience for detecting and modulating the valley. In this review, we first introduce the development of valleytronics. Then, the valley polarization forms by the p, d, and f-orbit that are discussed. Following, we discuss the investigation progress of modulating the valley polarization of two-dimensional ferrovalley materials by multiple physical fields, such as electric, stacking mode, strain, and interface. Finally, we look forward to the future developments of valleytronics.

Antiferromagnetism in GaS monolayer doped with TM–TM atom pairs (TM = V, Cr, Mn, and Fe)

“…So far, a large variety of 2D materials beyond graphene and its derivatives have been fabricated, thanks to the advanced synthesis method, such as those of the IVA group (silicene, 3 germanene, 4 stanene, 5 and silicon carbide 6 ), the VA group or pnictogens (phosphorene, 7,8 arsenene, 9 and antimonene 10 ), hexagonal boron nitride (h-BN), 11,12 and transition-metal dichalcogenides (MX 2 , where M = Mo and W, X = S and Se), 13–16 among others. In this regard, intriguing properties, such as ferrovalley, 17,18 topological bands, 19 multiferroic, 20 and more, have been found. Investigations have explored 2D materials as potential candidates for light-emitting devices, 21,22 gas sensing, 23,24 catalysis, 25,26 photonics, 27,28 and energy production and storage, 29,30 among others.…”