Progress on type-II InAs/GaSb superlattice (T2SL) infrared photodetector : from MWIR to VLWIR spectral domains

Christol, Philippe; Rodriguez, J. B.

doi:10.1117/12.2304264

Cited by 2 publications

(1 citation statement)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The ability to accurately measure or sense temperature change is dependent on the application and material which can be used for that particular case. Recent advances in material science and electronics have given highly sensitive contact and non-contact methods of measuring a very wide range of temperatures [14,15]. However, many of these materials are bulky, toxic or expensive.…”

Section: Introductionmentioning

confidence: 99%

Thermal and Photo Sensing Capabilities of Mono- and Few-Layer Thick Transition Metal Dichalcogenides

2020

View full text Add to dashboard Cite

Two-dimensional (2D) materials have shown promise in various optical and electrical applications. Among these materials, semiconducting transition metal dichalcogenides (TMDs) have been heavily studied recently for their photodetection and thermoelectric properties. The recent progress in fabrication, defect engineering, doping, and heterostructure design has shown vast improvements in response time and sensitivity, which can be applied to both contact-based (thermocouple), and non-contact (photodetector) thermal sensing applications. These improvements have allowed the possibility of cost-effective and tunable thermal sensors for novel applications, such as broadband photodetectors, ultrafast detectors, and high thermoelectric figures of merit. In this review, we summarize the properties arisen in works that focus on the respective qualities of TMD-based photodetectors and thermocouples, with a focus on their optical, electrical, and thermoelectric capabilities for using them in sensing and detection.

show abstract

Section: Introductionmentioning

confidence: 99%

Thermal and Photo Sensing Capabilities of Mono- and Few-Layer Thick Transition Metal Dichalcogenides

2020

View full text Add to dashboard Cite

show abstract

Design of long‐wavelength infrared InAs/InAsSb type‐II superlattice avalanche photodetector with stepped grading layer

Cheng,

Shen,

et al. 2024

Electron

View full text Add to dashboard Cite

Weak response in long‐wavelength infrared (LWIR) detection has long been a perennial concern, significantly limiting the reliability of applications. Avalanche photodetectors (APDs) offer excellent responsivity but are plagued by high dark current during the multiplication process. Here, we propose a high‐performance type‐II superlattices (T2SLs) LWIR APD to address these issues. The low Auger recombination rate of the InAs/InAsSb T2SLs absorption layer is exploited to reduce the dark current initially. AlAsSb with a low k value is employed as the multiplication layer to suppress device noise while maintaining sufficient gain. To facilitate carrier transport, the conduction band discontinuity is optimized by inserting an InAs/AlSb T2SLs stepped grading layer between the absorption and multiplication layers. As a result, the device exhibits excellent photoresponse at 8.4 μm at 100 K and maintains a low dark current density of 5.48 × 10−2 A/cm2. Specifically, it achieves a maximum gain of 366, a responsivity of 650 A/W, and a quantum efficiency of 26.28% under breakdown voltage. This design offers a promising solution for the advancement of LWIR detection.

show abstract

Progress on type-II InAs/GaSb superlattice (T2SL) infrared photodetector : from MWIR to VLWIR spectral domains

Cited by 2 publications

References 15 publications

Thermal and Photo Sensing Capabilities of Mono- and Few-Layer Thick Transition Metal Dichalcogenides

Thermal and Photo Sensing Capabilities of Mono- and Few-Layer Thick Transition Metal Dichalcogenides

Design of long‐wavelength infrared InAs/InAsSb type‐II superlattice avalanche photodetector with stepped grading layer

Contact Info

Product

Resources

About