Progress toward a 30 nm silicon metal–oxide–semiconductor gate technology

Tennant, D. M.; Timp, G.; Ocola, Leonidas E.; Green, M.; Sorsch, T.; Kornblit, A.; Klemens, F.; Kleiman, R. N.; Kim, Y.; Timp, Winston

doi:10.1116/1.590972

Cited by 8 publications

(3 citation statements)

References 11 publications

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“…A high resolution is always at expense of the throughput value because reduced beam energy and resist sensitivity are required to obtain a well-defined boundary. So, it is quite challenging to simultaneously achieve high resolution and large throughput due to Tenant’s Law. , The proximity effect is weaken due to the naturally formed clear boundary, and therefore, no more exposal time is required in the developed LDW technique. Besides the super high resolution, the developed LDW technique exhibits a very attractive throughput of 10 7 μm 2 /h.…”

Section: Resultsmentioning

confidence: 99%

5 nm Nanogap Electrodes and Arrays by Super-resolution Laser Lithography

et al. 2020

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The development of reliable, mass-produced, and cost-effective sub-10 nm nanofabrication technology leads to an unprecedented level of integration of photonic devices. In this work, we describe the development of a laser direct writing (LDW) lithography technique with ∼5 nm feature size, which is about 1/55 of the optical diffraction limit of the LDW system (405 nm laser and 0.9 NA objective), and the realization of 5 nm nanogap electrodes. This LDW lithography exhibits an attractive capability of well-site control and mass production of ∼5 × 105 nanogap electrodes per hour, breaking the trade-off between resolution and throughput in a nanofabrication technique. Nanosensing chips have been demonstrated with the as-obtained nanogap electrodes, where controllable surface enhancement Raman scattering of rhodamine 6G has been realized via adjusting the gap width and, especially, the applied bias voltages. Our results establish that such a low-cost and high-efficient lithography technology has great potential to fabricate compact integrated circuits and biochips.

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Section: Resultsmentioning

confidence: 99%

5 nm Nanogap Electrodes and Arrays by Super-resolution Laser Lithography

et al. 2020

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“…A more conventional MOSFET, but with a 0.1 µm amorphous silicon gate defined by an AFM tip, was fabricated by Minne et al 3 The electrical characteristics are close, but not superior, to the 64 nm gate MOSFET fabricated by EBL. 46 However, the 0.1 µm gate lithography does not seem to justify the need for SPL. Following the same paradigm but applying to a thin layer of Ti, Matsumoto et al 5 demonstrated that a SET can be fabricated by oxidizing the Ti to create a tunneling gap of 15-20 nm between the source/drain and the central conducting island.…”

Section: Devices Fabricated By Splmentioning

confidence: 99%

Role of Scanning Probes in Nanoelectronics: A Critical Review

Shen

2000

Surf. Rev. Lett.

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The continuous downsizing of electronic devices has promoted many ideas of lithography and fabrication techniques at the nanometer scale. Scanning probe lithography (SPL) has been intensively explored as a potential alternative. The conceptual development of the SPL endeavors and their basic mechanisms in the past decade are briefly reviewed. Scaling down the conventional field effect transistors below 30 nm may present enormous technical and economical challenges. Random polarization and fabrication of reproducible lateral tunneling junctions continue to be two major barriers for quantum devices. Instead of trying to compete with other projection type lithographic techniques at the nanometer scale, scanning probes are best suited to explore atom scale devices.

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“…[2][3][4] SCM is an extension of contact atomic force microscopy ͑AFM͒. [2][3][4] SCM is an extension of contact atomic force microscopy ͑AFM͒.…”

Section: Introductionmentioning

confidence: 99%

Detailed study of scanning capacitance microscopy on cross-sectional and beveled junctions

Duhayon

Clarysse

Eyben

et al. 2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inBias-induced junction displacements in scanning spreading resistance microscopy and scanning capacitance microscopy J.Two dimensional dopant and carrier profiles obtained by scanning capacitance microscopy on an actively biased cross-sectioned metal-oxide-semiconductor field-effect transistorIn this work we have done a systematic study with scanning capacitance microscopy ͑SCM͒ on cross-sectional and beveled structures. A study was made on the practical problem of contrast reversal as well as on the effect of carrier spilling related to bevel angle, steepness and substrate concentration of the doping profile. A comparison has been made with the results achieved with spreading resistance profiling and also with theoretical predictions. Finally, the junction displacement for cross-sectional and beveled junctions is studied as a function of the applied bias. It is shown that the junction displacement is much smaller on the beveled surface after demagnification. Furthermore, the large extension of the profile along the beveled surface allows us to study the bias induced variation of the SCM signal within the depletion layer in great detail.

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Progress toward a 30 nm silicon metal–oxide–semiconductor gate technology

Cited by 8 publications

References 11 publications

5 nm Nanogap Electrodes and Arrays by Super-resolution Laser Lithography

5 nm Nanogap Electrodes and Arrays by Super-resolution Laser Lithography

Role of Scanning Probes in Nanoelectronics: A Critical Review

Detailed study of scanning capacitance microscopy on cross-sectional and beveled junctions

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