Progress towards intersubband quantum-box lasers for highly efficient continuous wave operation in the mid-infrared

Botez, D.; Tsvid, G.; D'Souza, M.; Rathi, M. K.; Shin, Jae-Cheol; Kirch, Jeremy; Mawst, Luke J.; Kuech, T. F.; Vurgaftman, I.; Meyer, J. R.; Plant, Jason J.; Turner, G. W.

doi:10.1117/1.3085992

Cited by 5 publications

(1 citation statement)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Furthermore, active regions with suppressed carrier leakage are quite relevant for the development of highly efficient intersubband quantum box (IQB) lasers 14 since the longer the upper-laser-level lifetime, the more sensitive the devices are to carrier leakage to the continuum. Thus the development of DW-QC devices has been pursued not only for improving the performance and reliability of QC lasers, but also as a means to fulfill the promise that IQB devices hold of achieving continuous-wave (CW) wallplug efficiencies as high as 50 % at room temperature 15 .…”

Section: The Deep-well Conceptmentioning

confidence: 99%

Suppression of carrier leakage in 4.8 μm - emitting quantum cascade lasers

et al. 2010

View full text Add to dashboard Cite

In this work we show that by using both deep quantum wells and tall barriers in the active regions of quantum cascade (QC)-laser structures and by tapering the conduction-band edge of both injector an extractor regions one can significantly reduce the leakage of the injected carriers. Threshold-current, J th and differential-quantum efficiency, η d characteristic temperatures, T 0 and T 1 , values as high as 278 K and 285 K are obtained to 90 o C heatsink temperature, which means that J th and η d vary ~ 2.5 slower over the 20-90 o C temperature range than in conventional QC devices. Modified equations for J th and η d are derived. In particular, the equation for η d includes, for the first time, its dependence on heatsink temperature. A model for the thermal excitation of injected carriers from the upper lasing level to upper active-region energy states from where they relax to lower active-region energy states or get scattered to the upper Γ miniband is employed to estimate carrier leakage. Good agreement with experiment is obtained for both conventional QC lasers and deep-well (DW)-QC lasers.

show abstract

Section: The Deep-well Conceptmentioning

confidence: 99%

Suppression of carrier leakage in 4.8 μm - emitting quantum cascade lasers

et al. 2010

View full text Add to dashboard Cite

show abstract

Intersubband Quantum‐Box Lasers: Progress and Potential as Uncooled Mid‐Infrared Sources

Luryi

Zaslavsky

2010

Future Trends in Microelectronics

View full text Add to dashboard Cite

Long lifetimes of quantum-dot intersublevel transitions in the terahertz range

et al. 2009

View full text Add to dashboard Cite

Carrier relaxation is a key issue in determining the efficiency of semiconductor optoelectronic device operation. Devices incorporating semiconductor quantum dots have the potential to overcome many of the limitations of quantum-well-based devices because of the predicted long quantum-dot excited-state lifetimes. For example, the population inversion required for terahertz laser operation in quantum-well-based devices (quantum-cascade lasers) is fundamentally limited by efficient scattering between the laser levels, which form a continuum in the plane of the quantum well. In this context, semiconductor quantum dots are a highly attractive alternative for terahertz devices, because of their intrinsic discrete energy levels. Here, we present the first measurements, and theoretical description, of the intersublevel carrier relaxation in quantum dots for transition energies in the few terahertz range. Long intradot relaxation times (1.5 ns) are found for level separations of 14 meV (3.4 THz), decreasing very strongly to approximately 2 ps at 30 meV (7 THz), in very good agreement with our microscopic theory of the carrier relaxation process. Our studies pave the way for quantum-dot terahertz device development, providing the fundamental knowledge of carrier relaxation times required for optimum device design.

show abstract

Progress towards intersubband quantum-box lasers for highly efficient continuous wave operation in the mid-infrared

Cited by 5 publications

References 25 publications

Suppression of carrier leakage in 4.8 μm - emitting quantum cascade lasers

Suppression of carrier leakage in 4.8 μm - emitting quantum cascade lasers

Intersubband Quantum‐Box Lasers: Progress and Potential as Uncooled Mid‐Infrared Sources

Long lifetimes of quantum-dot intersublevel transitions in the terahertz range

Contact Info

Product

Resources

About